The influence of fabrication process on top-gate thin-film transistors

Wen Kai Lin; Kou Chen Liu; Jyun Ning Chen; Sung Cheng Hu; Shu Tong Chang

doi:10.1016/j.tsf.2011.01.159

The influence of fabrication process on top-gate thin-film transistors

Wen Kai Lin, Kou Chen Liu^*, Jyun Ning Chen, Sung Cheng Hu, Shu Tong Chang

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

10 Scopus citations

Abstract

Amorphous indium zinc oxide (a-IZO) thin-film transistors (TFTs) with bottom- and top-gate structures were fabricated at room temperature by direct current (DC) magnetron sputter in this research. High dielectric constant (κ) hafnium oxide (HfO₂) films and a-IZO were deposited for the gate insulator and the semiconducting channel under a mixture of ambient argon and oxygen gas, respectively. The bottom-gate TFTs showed good TFT characteristics, but the top-gate TFTs did not display the same characteristics as the bottom-gate TFTs despite undergoing the same process of sputtering with identical conditions. The electrical characteristics of the top-gate a-IZO TFTs exhibited strong relationships with sputtering power as gate dielectric layer deposition in this study. The ion bombardment and incorporation of sputtering ions damaged the interface between the active layer and the gate insulator in top-gate TFTs. Hence, the sputtering power was reduced to decrease damage while depositing HfO₂ films. When using 50 W DC magnetron sputtering, the top-gate a-IZO TFTs showed the following results: a saturation mobility of 5.62 cm²/V-s; an on/off current ratio of 1 × 10⁵; a sub-threshold swing (SS) of 0.64 V/decade; and a threshold voltage (V _th) of 2.86 V.

Original language	English
Pages (from-to)	5126-5130
Number of pages	5
Journal	Thin Solid Films
Volume	519
Issue number	15
DOIs	https://doi.org/10.1016/j.tsf.2011.01.159
State	Published - 31 05 2011

Keywords

Oxide semiconductor
Plasma damage
Sputter
Thin-film transistor
Top-gate

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10.1016/j.tsf.2011.01.159

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title = "The influence of fabrication process on top-gate thin-film transistors",

abstract = "Amorphous indium zinc oxide (a-IZO) thin-film transistors (TFTs) with bottom- and top-gate structures were fabricated at room temperature by direct current (DC) magnetron sputter in this research. High dielectric constant (κ) hafnium oxide (HfO2) films and a-IZO were deposited for the gate insulator and the semiconducting channel under a mixture of ambient argon and oxygen gas, respectively. The bottom-gate TFTs showed good TFT characteristics, but the top-gate TFTs did not display the same characteristics as the bottom-gate TFTs despite undergoing the same process of sputtering with identical conditions. The electrical characteristics of the top-gate a-IZO TFTs exhibited strong relationships with sputtering power as gate dielectric layer deposition in this study. The ion bombardment and incorporation of sputtering ions damaged the interface between the active layer and the gate insulator in top-gate TFTs. Hence, the sputtering power was reduced to decrease damage while depositing HfO2 films. When using 50 W DC magnetron sputtering, the top-gate a-IZO TFTs showed the following results: a saturation mobility of 5.62 cm2/V-s; an on/off current ratio of 1 × 105; a sub-threshold swing (SS) of 0.64 V/decade; and a threshold voltage (V th) of 2.86 V.",

keywords = "Oxide semiconductor, Plasma damage, Sputter, Thin-film transistor, Top-gate",

author = "Lin, {Wen Kai} and Liu, {Kou Chen} and Chen, {Jyun Ning} and Hu, {Sung Cheng} and Chang, {Shu Tong}",

year = "2011",

month = may,

day = "31",

doi = "10.1016/j.tsf.2011.01.159",

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pages = "5126--5130",

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issn = "0040-6090",

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T1 - The influence of fabrication process on top-gate thin-film transistors

AU - Lin, Wen Kai

AU - Liu, Kou Chen

AU - Chen, Jyun Ning

AU - Hu, Sung Cheng

AU - Chang, Shu Tong

PY - 2011/5/31

Y1 - 2011/5/31

N2 - Amorphous indium zinc oxide (a-IZO) thin-film transistors (TFTs) with bottom- and top-gate structures were fabricated at room temperature by direct current (DC) magnetron sputter in this research. High dielectric constant (κ) hafnium oxide (HfO2) films and a-IZO were deposited for the gate insulator and the semiconducting channel under a mixture of ambient argon and oxygen gas, respectively. The bottom-gate TFTs showed good TFT characteristics, but the top-gate TFTs did not display the same characteristics as the bottom-gate TFTs despite undergoing the same process of sputtering with identical conditions. The electrical characteristics of the top-gate a-IZO TFTs exhibited strong relationships with sputtering power as gate dielectric layer deposition in this study. The ion bombardment and incorporation of sputtering ions damaged the interface between the active layer and the gate insulator in top-gate TFTs. Hence, the sputtering power was reduced to decrease damage while depositing HfO2 films. When using 50 W DC magnetron sputtering, the top-gate a-IZO TFTs showed the following results: a saturation mobility of 5.62 cm2/V-s; an on/off current ratio of 1 × 105; a sub-threshold swing (SS) of 0.64 V/decade; and a threshold voltage (V th) of 2.86 V.

AB - Amorphous indium zinc oxide (a-IZO) thin-film transistors (TFTs) with bottom- and top-gate structures were fabricated at room temperature by direct current (DC) magnetron sputter in this research. High dielectric constant (κ) hafnium oxide (HfO2) films and a-IZO were deposited for the gate insulator and the semiconducting channel under a mixture of ambient argon and oxygen gas, respectively. The bottom-gate TFTs showed good TFT characteristics, but the top-gate TFTs did not display the same characteristics as the bottom-gate TFTs despite undergoing the same process of sputtering with identical conditions. The electrical characteristics of the top-gate a-IZO TFTs exhibited strong relationships with sputtering power as gate dielectric layer deposition in this study. The ion bombardment and incorporation of sputtering ions damaged the interface between the active layer and the gate insulator in top-gate TFTs. Hence, the sputtering power was reduced to decrease damage while depositing HfO2 films. When using 50 W DC magnetron sputtering, the top-gate a-IZO TFTs showed the following results: a saturation mobility of 5.62 cm2/V-s; an on/off current ratio of 1 × 105; a sub-threshold swing (SS) of 0.64 V/decade; and a threshold voltage (V th) of 2.86 V.

KW - Oxide semiconductor

KW - Plasma damage

KW - Sputter

KW - Thin-film transistor

KW - Top-gate

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The influence of fabrication process on top-gate thin-film transistors

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