The influence of Ti doping and annealing on Ce                         2                         Ti                         2                         O                         7                          flash memory devices

Chyuan Haur Kao; Su Zhien Chen; Yang Luo; Wang Ting Chiu; Shih Wei Chiu; I. Chien Chen; Chan Yu Lin; Hsiang Chen

doi:10.1016/j.apsusc.2016.12.008

The influence of Ti doping and annealing on Ce ₂ Ti ₂ O ₇ flash memory devices

Chyuan Haur Kao, Su Zhien Chen, Yang Luo, Wang Ting Chiu, Shih Wei Chiu, I. Chien Chen, Chan Yu Lin, Hsiang Chen^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

4 Scopus citations

Abstract

In this research, a CeO ₂ film with Ti doping was used as a trapping layer in metal oxide high-K-oxide-Si (MOHOS)-type memory devices. Since incorporation of Ti atoms into the film could fix dangling bonds and defects, the Ce ₂ Ti ₂ O ₇ trapping layer with annealing treatment could have a larger memory window and a faster programming/erasing speed. To confirm the origin, multiple material analyses indicate that annealing at an appropriate temperature and Ti doping could enhance crystallization. The Ce ₂ Ti ₂ O ₇ -based memory device is promising for future industrial flash memory applications.

Original language	English
Pages (from-to)	1673-1677
Number of pages	5
Journal	Applied Surface Science
Volume	396
DOIs	https://doi.org/10.1016/j.apsusc.2016.12.008
State	Published - 28 02 2017

Bibliographical note

Publisher Copyright:
© 2016 Elsevier B.V.

Keywords

Annealing
Ce Ti O
Crystallization
Flash memory
Ti doping

Access to Document

10.1016/j.apsusc.2016.12.008

Cite this

Kao, C. H., Chen, S. Z., Luo, Y., Chiu, W. T., Chiu, S. W., Chen, I. C., Lin, C. Y., & Chen, H. (2017). The influence of Ti doping and annealing on Ce ₂ Ti ₂ O ₇ flash memory devices Applied Surface Science, 396, 1673-1677. https://doi.org/10.1016/j.apsusc.2016.12.008

Kao, Chyuan Haur ; Chen, Su Zhien ; Luo, Yang et al. / The influence of Ti doping and annealing on Ce ₂ Ti ₂ O ₇ flash memory devices In: Applied Surface Science. 2017 ; Vol. 396. pp. 1673-1677.

@article{ef45ddbbf5b544488ca5bf1eb4e4ca05,

title = " The influence of Ti doping and annealing on Ce 2 Ti 2 O 7 flash memory devices ",

abstract = " In this research, a CeO 2 film with Ti doping was used as a trapping layer in metal oxide high-K-oxide-Si (MOHOS)-type memory devices. Since incorporation of Ti atoms into the film could fix dangling bonds and defects, the Ce 2 Ti 2 O 7 trapping layer with annealing treatment could have a larger memory window and a faster programming/erasing speed. To confirm the origin, multiple material analyses indicate that annealing at an appropriate temperature and Ti doping could enhance crystallization. The Ce 2 Ti 2 O 7 -based memory device is promising for future industrial flash memory applications.",

keywords = "Annealing, Ce Ti O, Crystallization, Flash memory, Ti doping",

author = "Kao, {Chyuan Haur} and Chen, {Su Zhien} and Yang Luo and Chiu, {Wang Ting} and Chiu, {Shih Wei} and Chen, {I. Chien} and Lin, {Chan Yu} and Hsiang Chen",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2017",

month = feb,

day = "28",

doi = "10.1016/j.apsusc.2016.12.008",

language = "英语",

volume = "396",

pages = "1673--1677",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

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Kao, CH, Chen, SZ, Luo, Y, Chiu, WT, Chiu, SW, Chen, IC, Lin, CY & Chen, H 2017, ' The influence of Ti doping and annealing on Ce ₂ Ti ₂ O ₇ flash memory devices ', Applied Surface Science, vol. 396, pp. 1673-1677. https://doi.org/10.1016/j.apsusc.2016.12.008

The influence of Ti doping and annealing on Ce ₂ Ti ₂ O ₇ flash memory devices . / Kao, Chyuan Haur; Chen, Su Zhien; Luo, Yang et al.
In: Applied Surface Science, Vol. 396, 28.02.2017, p. 1673-1677.

Research output: Contribution to journal › Journal Article › peer-review

TY - JOUR

T1 - The influence of Ti doping and annealing on Ce 2 Ti 2 O 7 flash memory devices

AU - Kao, Chyuan Haur

AU - Chen, Su Zhien

AU - Luo, Yang

AU - Chiu, Wang Ting

AU - Chiu, Shih Wei

AU - Chen, I. Chien

AU - Lin, Chan Yu

AU - Chen, Hsiang

PY - 2017/2/28

Y1 - 2017/2/28

N2 - In this research, a CeO 2 film with Ti doping was used as a trapping layer in metal oxide high-K-oxide-Si (MOHOS)-type memory devices. Since incorporation of Ti atoms into the film could fix dangling bonds and defects, the Ce 2 Ti 2 O 7 trapping layer with annealing treatment could have a larger memory window and a faster programming/erasing speed. To confirm the origin, multiple material analyses indicate that annealing at an appropriate temperature and Ti doping could enhance crystallization. The Ce 2 Ti 2 O 7 -based memory device is promising for future industrial flash memory applications.

AB - In this research, a CeO 2 film with Ti doping was used as a trapping layer in metal oxide high-K-oxide-Si (MOHOS)-type memory devices. Since incorporation of Ti atoms into the film could fix dangling bonds and defects, the Ce 2 Ti 2 O 7 trapping layer with annealing treatment could have a larger memory window and a faster programming/erasing speed. To confirm the origin, multiple material analyses indicate that annealing at an appropriate temperature and Ti doping could enhance crystallization. The Ce 2 Ti 2 O 7 -based memory device is promising for future industrial flash memory applications.

KW - Annealing

KW - Ce Ti O

KW - Crystallization

KW - Flash memory

KW - Ti doping

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U2 - 10.1016/j.apsusc.2016.12.008

DO - 10.1016/j.apsusc.2016.12.008

M3 - 文章

AN - SCOPUS:85006721115

SN - 0169-4332

VL - 396

SP - 1673

EP - 1677

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Kao CH, Chen SZ, Luo Y, Chiu WT, Chiu SW, Chen IC et al. The influence of Ti doping and annealing on Ce ₂ Ti ₂ O ₇ flash memory devices Applied Surface Science. 2017 Feb 28;396:1673-1677. doi: 10.1016/j.apsusc.2016.12.008