The interface properties of SiO2/strained-si with carbon incorporation surface channel MOSFETs

  • M. H. Lee*
  • , S. T. Chang
  • , S. Maikap
  • , C. Y. Yu
  • , C. W. Liu
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Original languageEnglish
Title of host publicationThird International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
StatePublished - 2006
Externally publishedYes
EventThird International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States
Duration: 15 05 200617 05 2006

Publication series

NameThird International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Volume2006

Conference

ConferenceThird International SiGe Technology and Device Meeting, ISTDM 2006
Country/TerritoryUnited States
CityPrinceton, NJ
Period15/05/0617/05/06

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