The interface properties of SiO2/strained-si with carbon incorporation surface channel MOSFETs

M. H. Lee; S. T. Chang; S. Maikap; C. Y. Yu; C. W. Liu

The interface properties of SiO₂/strained-si with carbon incorporation surface channel MOSFETs

M. H. Lee^*
, S. T. Chang
, S. Maikap
, C. Y. Yu
, C. W. Liu

^*Corresponding author for this work

Industrial Technology Research Institute of Taiwan
National Chung Hsing University
National Taiwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
State	Published - 2006
Externally published	Yes
Event	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States Duration: 15 05 2006 → 17 05 2006

Publication series

Name	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Volume	2006

Conference

Conference	Third International SiGe Technology and Device Meeting, ISTDM 2006
Country/Territory	United States
City	Princeton, NJ
Period	15/05/06 → 17/05/06

Cite this

Lee, M. H., Chang, S. T., Maikap, S., Yu, C. Y., & Liu, C. W. (2006). The interface properties of SiO₂/strained-si with carbon incorporation surface channel MOSFETs. In Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest Article 1715972 (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006).

@inproceedings{69b20f9c6395404ea75aab474c48285a,

title = "The interface properties of SiO2/strained-si with carbon incorporation surface channel MOSFETs",

author = "Lee, \{M. H.\} and Chang, \{S. T.\} and S. Maikap and Yu, \{C. Y.\} and Liu, \{C. W.\}",

year = "2006",

language = "英语",

isbn = "1424404614",

series = "Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest",

booktitle = "Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest",

note = "Third International SiGe Technology and Device Meeting, ISTDM 2006 ; Conference date: 15-05-2006 Through 17-05-2006",

}

Lee, MH, Chang, ST, Maikap, S, Yu, CY & Liu, CW 2006, The interface properties of SiO₂/strained-si with carbon incorporation surface channel MOSFETs. in Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest., 1715972, Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest, vol. 2006, Third International SiGe Technology and Device Meeting, ISTDM 2006, Princeton, NJ, United States, 15/05/06.

The interface properties of SiO₂/strained-si with carbon incorporation surface channel MOSFETs. / Lee, M. H.; Chang, S. T.; Maikap, S. et al.
Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. 2006. 1715972 (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - The interface properties of SiO2/strained-si with carbon incorporation surface channel MOSFETs

AU - Lee, M. H.

AU - Chang, S. T.

AU - Maikap, S.

AU - Yu, C. Y.

AU - Liu, C. W.

PY - 2006

Y1 - 2006

UR - https://www.scopus.com/pages/publications/34247491162

M3 - 会议稿件

AN - SCOPUS:34247491162

SN - 1424404614

SN - 9781424404612

T3 - Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest

BT - Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest

T2 - Third International SiGe Technology and Device Meeting, ISTDM 2006

Y2 - 15 May 2006 through 17 May 2006

ER -

The interface properties of SiO2/strained-si with carbon incorporation surface channel MOSFETs

Publication series

Conference

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Cite this

The interface properties of SiO₂/strained-si with carbon incorporation surface channel MOSFETs