The investigation of the high-k Gd2O3 (Gadolinium Oxide) interdielectrics deposited on the polycrystalline silicon

Chyuan Haur Kao*, Hsiang Chen, Yu Tsung Pan, Jing Sing Chiu, Shih Po Lin, Chao Sung Lai

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

19 Scopus citations

Abstract

The high- k Gd2O3 films deposited on polycrystalline silicon treated with different post rapid thermal annealing (RTA) temperatures were formed as high- k interdielectrics. A combinational electrical and material analysis on the samples was performed to obtain a thorough understanding of annealing effect on the high- k Gd2O3 interdielectrics. The annealing temperature at 900°C was the optimal condition to reduce the defects and interface traps and hence improve material quality to fabricate a well-crystallized film. This high- k Gd2O3 interdielectric shows promise for future generation of nonvolatile memory applications.

Original languageEnglish
Pages (from-to)H915-H918
JournalJournal of the Electrochemical Society
Volume157
Issue number10
DOIs
StatePublished - 2010

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