Abstract
The high- k Gd2O3 films deposited on polycrystalline silicon treated with different post rapid thermal annealing (RTA) temperatures were formed as high- k interdielectrics. A combinational electrical and material analysis on the samples was performed to obtain a thorough understanding of annealing effect on the high- k Gd2O3 interdielectrics. The annealing temperature at 900°C was the optimal condition to reduce the defects and interface traps and hence improve material quality to fabricate a well-crystallized film. This high- k Gd2O3 interdielectric shows promise for future generation of nonvolatile memory applications.
Original language | English |
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Pages (from-to) | H915-H918 |
Journal | Journal of the Electrochemical Society |
Volume | 157 |
Issue number | 10 |
DOIs | |
State | Published - 2010 |