The investigation of the high-k Gd₂O₃ (Gadolinium Oxide) interdielectrics deposited on the polycrystalline silicon

The high- k Gd₂O₃ films deposited on polycrystalline silicon treated with different post rapid thermal annealing (RTA) temperatures were formed as high- k interdielectrics. A combinational electrical and material analysis on the samples was performed to obtain a thorough understanding of annealing effect on the high- k Gd₂O₃ interdielectrics. The annealing temperature at 900°C was the optimal condition to reduce the defects and interface traps and hence improve material quality to fabricate a well-crystallized film. This high- k Gd₂O₃ interdielectric shows promise for future generation of nonvolatile memory applications.