The investigations of InAs quantum dots overgrown on in 0.1Ga0.9As surfactant layer and 10° off-angle (100) GaAs substrate

Shiang Feng Tang; Min Yu Hsu; Cheng Der Chiang; C. C. Su; Chuan Pu Liu; Yu Ching Fang

doi:10.1117/12.759448

The investigations of InAs quantum dots overgrown on in _0.1Ga_0.9As surfactant layer and 10° off-angle (100) GaAs substrate

Shiang Feng Tang^*, Min Yu Hsu, Cheng Der Chiang, C. C. Su, Chuan Pu Liu, Yu Ching Fang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

For propose of achieving the high coherent quantum dots or the expected spectral emission, we have proposed the epitaxial method solved by using self-organized grown on the In_xGa_1-xAs relaxed layer and the mis-orientated GaAs substrates. In this study, using extra slow growth rate of 0.075ML/sec to grow the quantum dot matrix under the temperature of 500°C by the general Riber 32P solid-source MBE system, the high surface density and uniformity in size of two-stacked of quantum dot (QD) matrix have been established. The temperature dependences of the full widths at half-maximum (FWHM) and the positions of photoluminescence (PL) bands are studied experimentally by adding In_0.1Ga_0.9As surfactant layer and using mis-orientated substrate, respectively. The 3-dimensional QD images using atomic force microscopy (AFM) well agree with the results of above mentioned. Therefore, a systematic estimate is given of the QD structures grown on different epitaxial conditions.

Original language	English
Title of host publication	Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV
DOIs	https://doi.org/10.1117/12.759448
State	Published - 2008
Externally published	Yes
Event	Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV - Canberra, Australia Duration: 05 12 2007 → 07 12 2007

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6800
ISSN (Print)	0277-786X

Conference

Conference	Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV
Country/Territory	Australia
City	Canberra
Period	05/12/07 → 07/12/07

Keywords

InAs
Misorientated substrate
Photoluminescence (PL)
Quantum dots (QDs)
Surfactant layer

Access to Document

10.1117/12.759448

Cite this

Tang, S. F., Hsu, M. Y., Chiang, C. D., Su, C. C., Liu, C. P., & Fang, Y. C. (2008). The investigations of InAs quantum dots overgrown on in _0.1Ga_0.9As surfactant layer and 10° off-angle (100) GaAs substrate. In Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV Article 68001E (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6800). https://doi.org/10.1117/12.759448

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title = "The investigations of InAs quantum dots overgrown on in 0.1Ga0.9As surfactant layer and 10° off-angle (100) GaAs substrate",

abstract = "For propose of achieving the high coherent quantum dots or the expected spectral emission, we have proposed the epitaxial method solved by using self-organized grown on the InxGa1-xAs relaxed layer and the mis-orientated GaAs substrates. In this study, using extra slow growth rate of 0.075ML/sec to grow the quantum dot matrix under the temperature of 500°C by the general Riber 32P solid-source MBE system, the high surface density and uniformity in size of two-stacked of quantum dot (QD) matrix have been established. The temperature dependences of the full widths at half-maximum (FWHM) and the positions of photoluminescence (PL) bands are studied experimentally by adding In0.1Ga0.9As surfactant layer and using mis-orientated substrate, respectively. The 3-dimensional QD images using atomic force microscopy (AFM) well agree with the results of above mentioned. Therefore, a systematic estimate is given of the QD structures grown on different epitaxial conditions.",

keywords = "InAs, Misorientated substrate, Photoluminescence (PL), Quantum dots (QDs), Surfactant layer",

author = "Tang, {Shiang Feng} and Hsu, {Min Yu} and Chiang, {Cheng Der} and Su, {C. C.} and Liu, {Chuan Pu} and Fang, {Yu Ching}",

year = "2008",

doi = "10.1117/12.759448",

language = "英语",

isbn = "9780819469717",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV",

note = "Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV ; Conference date: 05-12-2007 Through 07-12-2007",

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Tang, SF, Hsu, MY, Chiang, CD, Su, CC, Liu, CP & Fang, YC 2008, The investigations of InAs quantum dots overgrown on in _0.1Ga_0.9As surfactant layer and 10° off-angle (100) GaAs substrate. in Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV., 68001E, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV, Canberra, Australia, 05/12/07. https://doi.org/10.1117/12.759448

The investigations of InAs quantum dots overgrown on in _0.1Ga_0.9As surfactant layer and 10° off-angle (100) GaAs substrate. / Tang, Shiang Feng; Hsu, Min Yu; Chiang, Cheng Der et al.
Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV. 2008. 68001E (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6800).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chiang, Cheng Der

AU - Su, C. C.

AU - Liu, Chuan Pu

AU - Fang, Yu Ching

PY - 2008

Y1 - 2008

N2 - For propose of achieving the high coherent quantum dots or the expected spectral emission, we have proposed the epitaxial method solved by using self-organized grown on the InxGa1-xAs relaxed layer and the mis-orientated GaAs substrates. In this study, using extra slow growth rate of 0.075ML/sec to grow the quantum dot matrix under the temperature of 500°C by the general Riber 32P solid-source MBE system, the high surface density and uniformity in size of two-stacked of quantum dot (QD) matrix have been established. The temperature dependences of the full widths at half-maximum (FWHM) and the positions of photoluminescence (PL) bands are studied experimentally by adding In0.1Ga0.9As surfactant layer and using mis-orientated substrate, respectively. The 3-dimensional QD images using atomic force microscopy (AFM) well agree with the results of above mentioned. Therefore, a systematic estimate is given of the QD structures grown on different epitaxial conditions.

AB - For propose of achieving the high coherent quantum dots or the expected spectral emission, we have proposed the epitaxial method solved by using self-organized grown on the InxGa1-xAs relaxed layer and the mis-orientated GaAs substrates. In this study, using extra slow growth rate of 0.075ML/sec to grow the quantum dot matrix under the temperature of 500°C by the general Riber 32P solid-source MBE system, the high surface density and uniformity in size of two-stacked of quantum dot (QD) matrix have been established. The temperature dependences of the full widths at half-maximum (FWHM) and the positions of photoluminescence (PL) bands are studied experimentally by adding In0.1Ga0.9As surfactant layer and using mis-orientated substrate, respectively. The 3-dimensional QD images using atomic force microscopy (AFM) well agree with the results of above mentioned. Therefore, a systematic estimate is given of the QD structures grown on different epitaxial conditions.

KW - InAs

KW - Misorientated substrate

KW - Photoluminescence (PL)

KW - Quantum dots (QDs)

KW - Surfactant layer

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T2 - Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV

Y2 - 5 December 2007 through 7 December 2007

ER -

Tang SF, Hsu MY, Chiang CD, Su CC, Liu CP, Fang YC. The investigations of InAs quantum dots overgrown on in _0.1Ga_0.9As surfactant layer and 10° off-angle (100) GaAs substrate. In Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV. 2008. 68001E. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.759448