The photoelectrochemical performances of Sb-doped AgIn5S8 film electrodes prepared by chemical bath deposition

Kong Wei Cheng; Chao Ming Huang; Guan Ting Pan; Jau Chyn Huang; Tai Chou Lee; Thomas C.K. Yang

doi:10.1016/j.jphotochem.2008.11.018

The photoelectrochemical performances of Sb-doped AgIn₅S₈ film electrodes prepared by chemical bath deposition

Kong Wei Cheng^*, Chao Ming Huang, Guan Ting Pan, Jau Chyn Huang, Tai Chou Lee, Thomas C.K. Yang

^*Corresponding author for this work

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Journal Article › peer-review

9 Scopus citations

Abstract

The Sb-doped AgIn₅S₈ films were grown on indium-tin-oxide substrates using chemical bath deposition. The X-ray diffraction patterns of samples show the polycrystalline AgIn₅S₈ phase in these films. With the molar ratio of Sb/Ag in the solution higher than 0.2, the conduction type of samples turns into p-type. The thickness, energy band gaps, and carrier densities of these samples are in the range of 692-1119 nm, 1.71-1.73 eV and 5.75 × 10¹⁴ to 9.85 × 10¹⁴ cm^-3, respectively. The maximum photocurrent density of samples with external potential kept at 1.0 V vs. an Ag/AgCl reference electrode was found to be -2.73 mA/cm² under illumination using a 300 Xe lamp system. Crown

Original language	English
Pages (from-to)	107-114
Number of pages	8
Journal	Journal of Photochemistry and Photobiology A: Chemistry
Volume	202
Issue number	2-3
DOIs	https://doi.org/10.1016/j.jphotochem.2008.11.018
State	Published - 25 02 2009

Keywords

Crystalline
Electrode
Optical property
Photoelectrochemical reaction

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Access to Document

10.1016/j.jphotochem.2008.11.018

Cite this

@article{fd79c8396dba45419f17272c0541bd09,

title = "The photoelectrochemical performances of Sb-doped AgIn5S8 film electrodes prepared by chemical bath deposition",

abstract = "The Sb-doped AgIn5S8 films were grown on indium-tin-oxide substrates using chemical bath deposition. The X-ray diffraction patterns of samples show the polycrystalline AgIn5S8 phase in these films. With the molar ratio of Sb/Ag in the solution higher than 0.2, the conduction type of samples turns into p-type. The thickness, energy band gaps, and carrier densities of these samples are in the range of 692-1119 nm, 1.71-1.73 eV and 5.75 × 1014 to 9.85 × 1014 cm-3, respectively. The maximum photocurrent density of samples with external potential kept at 1.0 V vs. an Ag/AgCl reference electrode was found to be -2.73 mA/cm2 under illumination using a 300 Xe lamp system. Crown",

keywords = "Crystalline, Electrode, Optical property, Photoelectrochemical reaction",

author = "Cheng, \{Kong Wei\} and Huang, \{Chao Ming\} and Pan, \{Guan Ting\} and Huang, \{Jau Chyn\} and Lee, \{Tai Chou\} and Yang, \{Thomas C.K.\}",

year = "2009",

month = feb,

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doi = "10.1016/j.jphotochem.2008.11.018",

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T1 - The photoelectrochemical performances of Sb-doped AgIn5S8 film electrodes prepared by chemical bath deposition

AU - Cheng, Kong Wei

AU - Huang, Chao Ming

AU - Pan, Guan Ting

AU - Huang, Jau Chyn

AU - Lee, Tai Chou

AU - Yang, Thomas C.K.

PY - 2009/2/25

Y1 - 2009/2/25

N2 - The Sb-doped AgIn5S8 films were grown on indium-tin-oxide substrates using chemical bath deposition. The X-ray diffraction patterns of samples show the polycrystalline AgIn5S8 phase in these films. With the molar ratio of Sb/Ag in the solution higher than 0.2, the conduction type of samples turns into p-type. The thickness, energy band gaps, and carrier densities of these samples are in the range of 692-1119 nm, 1.71-1.73 eV and 5.75 × 1014 to 9.85 × 1014 cm-3, respectively. The maximum photocurrent density of samples with external potential kept at 1.0 V vs. an Ag/AgCl reference electrode was found to be -2.73 mA/cm2 under illumination using a 300 Xe lamp system. Crown

AB - The Sb-doped AgIn5S8 films were grown on indium-tin-oxide substrates using chemical bath deposition. The X-ray diffraction patterns of samples show the polycrystalline AgIn5S8 phase in these films. With the molar ratio of Sb/Ag in the solution higher than 0.2, the conduction type of samples turns into p-type. The thickness, energy band gaps, and carrier densities of these samples are in the range of 692-1119 nm, 1.71-1.73 eV and 5.75 × 1014 to 9.85 × 1014 cm-3, respectively. The maximum photocurrent density of samples with external potential kept at 1.0 V vs. an Ag/AgCl reference electrode was found to be -2.73 mA/cm2 under illumination using a 300 Xe lamp system. Crown

KW - Crystalline

KW - Electrode

KW - Optical property

KW - Photoelectrochemical reaction

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