The physical limit and manufacturability of power diode with carrier lifetime control

Ming Tan Cher*, Sun Lina, Nagarajan Raghavan, Huang Guangyu, Hsu Chuck, Wang Chase

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Carrier Lifetime Control (CLC) power diode is known to perform better than the standard power diode in terms of low loss, high switching speed and high reverse blocking voltage. We perform an extensive MEDICI device simulation covering a large parameter space of the structural and doping concentrations of the power diode through the use of Design of Experiment (DOE) matrix. The optimal electrical performance for each electrical parameter of the CLC power diode as well as the standard power diode is obtained, which represents the physical limit of these power diodes. The manufacturability of the power diodes are evaluated through the sensitivity analysis of these optimal electrical performances with respect to the variation of the structural and doping parameters. Such variations represent the process variations during actual diode fabrication.

Original languageEnglish
Title of host publicationICIEA 2007
Subtitle of host publication2007 Second IEEE Conference on Industrial Electronics and Applications
Pages46-51
Number of pages6
DOIs
StatePublished - 2007
Externally publishedYes
Event2007 2nd IEEE Conference on Industrial Electronics and Applications, ICIEA 2007 - Harbin, China
Duration: 23 05 200725 05 2007

Publication series

NameICIEA 2007: 2007 Second IEEE Conference on Industrial Electronics and Applications

Conference

Conference2007 2nd IEEE Conference on Industrial Electronics and Applications, ICIEA 2007
Country/TerritoryChina
CityHarbin
Period23/05/0725/05/07

Keywords

  • Carrier lifetime control
  • Design of experiment
  • Power diode
  • Response surface method
  • Simulated annealing

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