@inproceedings{68f9591404234fb8b61df778bb48b9d4,
title = "The polarity dependence of capacitances for HfO2 affected by post-CF4 plasma treatment",
abstract = "The polarity dependence of capacitances for HfO2 was first investigated in this work. A novel approach to improve HfO2 gate dielectrics by post-CF4 plaama treatment was proposed also. After HfO2 thin film deposition, post-CF4 plasma treatment was demonstrated to introduce the fluorine to incorporate in HfO2 thin film. Gate leakage current was improved at the direct tunneling region, and decreased 1-2 order at the F-N tunneling region with increasing CF4 plasms treatment time. The physical trapping model was proposed to explain the C-V hysteresis phenomenon under different measuring loops.",
author = "Lai, {Chao Sung} and Wu, {Woei Cherng} and Hsu, {Hui Hsin} and Chou, {Pai Chi} and Wu, {Shu Jen}",
year = "2004",
language = "英语",
isbn = "0780386582",
series = "Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics",
pages = "565--568",
booktitle = "2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004",
note = "2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 ; Conference date: 04-12-2004 Through 09-12-2004",
}