The polarity dependence of capacitances for HfO2 affected by post-CF4 plasma treatment

Chao Sung Lai*, Woei Cherng Wu, Hui Hsin Hsu, Pai Chi Chou, Shu Jen Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The polarity dependence of capacitances for HfO2 was first investigated in this work. A novel approach to improve HfO2 gate dielectrics by post-CF4 plaama treatment was proposed also. After HfO2 thin film deposition, post-CF4 plasma treatment was demonstrated to introduce the fluorine to incorporate in HfO2 thin film. Gate leakage current was improved at the direct tunneling region, and decreased 1-2 order at the F-N tunneling region with increasing CF4 plasms treatment time. The physical trapping model was proposed to explain the C-V hysteresis phenomenon under different measuring loops.

Original languageEnglish
Title of host publication2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
Pages565-568
Number of pages4
StatePublished - 2004
Event2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 - Kuala Lumpur, Malaysia
Duration: 04 12 200409 12 2004

Publication series

NameProceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics

Conference

Conference2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
Country/TerritoryMalaysia
CityKuala Lumpur
Period04/12/0409/12/04

Fingerprint

Dive into the research topics of 'The polarity dependence of capacitances for HfO2 affected by post-CF4 plasma treatment'. Together they form a unique fingerprint.

Cite this