@inproceedings{e97a6ed6f0d4484f8c51c0ca81de71f4,
title = "The polarity dependence of ONO thickness for wrapped-select-gate (WSG) SONOS memory",
abstract = "2-bits/cell operation characteristics of WSG-SONOS memory has been fully studied in different ONO thickness. The 2-bits/cell characteristics of WSG-SONOS memory will be determined by tunneling oxide and total ONO thicknesses. Besides, thicker top oxide thickness will contribute to better gate disturbance performance while maintaining the same drain disturbance. We also found that the excellent endurance can be performed for the device with thinner tunneling oxide thickness. Optimized ONO thickness for WSG-SONOS memory will be demonstrated in this paper.",
author = "Wang, {Kuan Ti} and Chao, {Tien Sheng} and Wu, {Woei Cherng} and Lai, {Chao Sung}",
year = "2007",
doi = "10.1109/MTDT.2007.4547617",
language = "英语",
isbn = "9781424416561",
series = "Records of the IEEE International Workshop on Memory Technology, Design and Testing",
pages = "51--54",
booktitle = "17th IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2007",
note = "17th IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2007 ; Conference date: 03-12-2007 Through 05-12-2007",
}