The quantum confinement effect of InGaN/GaN nanorods by photoelectrochemical oxidation

Woei Tyng Lin; Fang I. Lai; Shou Yi Kuo; Shao Chun Huang

doi:10.1109/INEC.2011.5991695

The quantum confinement effect of InGaN/GaN nanorods by photoelectrochemical oxidation

Woei Tyng Lin^*, Fang I. Lai, Shou Yi Kuo, Shao Chun Huang

^*Corresponding author for this work

Department of Electronic Engineering

Yuan Ze University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, the nanorods of 100-150nm diameter on an InGaN/GaN multi quantum well (MQW) structure were fabricated using self-assembled nickel metal nanomasks and inductively coupled plasma reactive ion etching. The photoelectron- chemical (PEC) methods were applied to oxidate the InGaN/GaN MQWs nanorods. After 5V/80min oxidation, the measured PL from the embedded InGaN/GaN MQWs shows an energy shift of 30meV and a smaller QCSE, which are caused by quantum confinement effect and the strain relaxation of MQWs. The blue shift range increased with decreasing MQWs diameter.

Original language	English
Title of host publication	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991695
State	Published - 2011
Event	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan Duration: 21 06 2011 → 24 06 2011

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
ISSN (Print)	2159-3523

Conference

Conference	4th IEEE International Nanoelectronics Conference, INEC 2011
Country/Territory	Taiwan
City	Tao-Yuan
Period	21/06/11 → 24/06/11

Keywords

LED
PEC
nanorod

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10.1109/INEC.2011.5991695

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title = "The quantum confinement effect of InGaN/GaN nanorods by photoelectrochemical oxidation",

abstract = "In this study, the nanorods of 100-150nm diameter on an InGaN/GaN multi quantum well (MQW) structure were fabricated using self-assembled nickel metal nanomasks and inductively coupled plasma reactive ion etching. The photoelectron- chemical (PEC) methods were applied to oxidate the InGaN/GaN MQWs nanorods. After 5V/80min oxidation, the measured PL from the embedded InGaN/GaN MQWs shows an energy shift of 30meV and a smaller QCSE, which are caused by quantum confinement effect and the strain relaxation of MQWs. The blue shift range increased with decreasing MQWs diameter.",

keywords = "LED, PEC, nanorod",

author = "Lin, {Woei Tyng} and Lai, {Fang I.} and Kuo, {Shou Yi} and Huang, {Shao Chun}",

year = "2011",

doi = "10.1109/INEC.2011.5991695",

language = "英语",

isbn = "9781457703799",

series = "Proceedings - International NanoElectronics Conference, INEC",

booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",

note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",

}

Lin, WT, Lai, FI, Kuo, SY & Huang, SC 2011, The quantum confinement effect of InGaN/GaN nanorods by photoelectrochemical oxidation. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991695, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, 21/06/11. https://doi.org/10.1109/INEC.2011.5991695

The quantum confinement effect of InGaN/GaN nanorods by photoelectrochemical oxidation. / Lin, Woei Tyng; Lai, Fang I.; Kuo, Shou Yi et al.
4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991695 (Proceedings - International NanoElectronics Conference, INEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - The quantum confinement effect of InGaN/GaN nanorods by photoelectrochemical oxidation

AU - Lin, Woei Tyng

AU - Lai, Fang I.

AU - Kuo, Shou Yi

AU - Huang, Shao Chun

PY - 2011

Y1 - 2011

N2 - In this study, the nanorods of 100-150nm diameter on an InGaN/GaN multi quantum well (MQW) structure were fabricated using self-assembled nickel metal nanomasks and inductively coupled plasma reactive ion etching. The photoelectron- chemical (PEC) methods were applied to oxidate the InGaN/GaN MQWs nanorods. After 5V/80min oxidation, the measured PL from the embedded InGaN/GaN MQWs shows an energy shift of 30meV and a smaller QCSE, which are caused by quantum confinement effect and the strain relaxation of MQWs. The blue shift range increased with decreasing MQWs diameter.

AB - In this study, the nanorods of 100-150nm diameter on an InGaN/GaN multi quantum well (MQW) structure were fabricated using self-assembled nickel metal nanomasks and inductively coupled plasma reactive ion etching. The photoelectron- chemical (PEC) methods were applied to oxidate the InGaN/GaN MQWs nanorods. After 5V/80min oxidation, the measured PL from the embedded InGaN/GaN MQWs shows an energy shift of 30meV and a smaller QCSE, which are caused by quantum confinement effect and the strain relaxation of MQWs. The blue shift range increased with decreasing MQWs diameter.

KW - LED

KW - PEC

KW - nanorod

UR - http://www.scopus.com/inward/record.url?scp=80053028297&partnerID=8YFLogxK

U2 - 10.1109/INEC.2011.5991695

DO - 10.1109/INEC.2011.5991695

M3 - 会议稿件

AN - SCOPUS:80053028297

SN - 9781457703799

T3 - Proceedings - International NanoElectronics Conference, INEC

BT - 4th IEEE International NanoElectronics Conference, INEC 2011

T2 - 4th IEEE International Nanoelectronics Conference, INEC 2011

Y2 - 21 June 2011 through 24 June 2011

ER -

The quantum confinement effect of InGaN/GaN nanorods by photoelectrochemical oxidation

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