Abstract
Carbon incorporation in strained-Si surface channel NMOSFET is investigated. Due to the ∼52% lattice mismatch between silicon and carbon, the channel is expected to have higher strain than strained-Si, indicating that the carrier mobility can be enhanced significantly. There is a ∼40% electron mobility enhancement for incorporated carbon content of 0.25% in strained-Si NMOSFETs compared to unstrained Si channels. The performance of channels with increased strain is not as high as theoretical predictions. This is due to the large Dit at the oxide/strained-Si:C interface and alloy scattering, which degrades carrier mobility enhancement.
Original language | English |
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Pages (from-to) | 1569-1572 |
Number of pages | 4 |
Journal | Solid-State Electronics |
Volume | 52 |
Issue number | 10 |
DOIs | |
State | Published - 10 2008 |
Keywords
- Alloy scattering
- Carbon incorporation
- Sheet resistance
- Strain