The structural and electrical comparison of Y₂O₃ and Ti-doped Y₂O₃ dielectrics

A Ti-doped Y₂O₃(Y₂Ti₂O₅) dielectric on polycrystalline silicon followed by rapid thermal annealing results in improved characteristics including a higher effective dielectric constant, higher breakdown electric field, lower electron trapping rate, and larger charge-to-breakdown when compared with Y₂O₃. The performance of high-k Y₂O₃ and Y₂Ti₂O₅ dielectrics were investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), capacitance-voltage, and current density-voltage. Incorporating Ti into the Y₂O₃ dielectric imparts improvements in the structural and electrical performance of the material. The Y₂Ti₂O₅ dielectric with 800 °C annealing treatment has the best performance among all the samples tested.