The structural and material properties of Cu(In,Ga)Se2 thin films

Y.-F. Wu; H.-P. Hsu; Jer-Chyi Wang; H.-Y. Chen

doi:10.1002/pssc.201100686

The structural and material properties of Cu(In,Ga)Se2 thin films

Y.-F. Wu, H.-P. Hsu, Jer-Chyi Wang, H.-Y. Chen

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

3 Scopus citations

Abstract

We report on the structural and material properties of Cu-poor CuIn<inf>1-x</inf>Ga<inf>x</inf> Se<inf>2</inf> (CIGS) thin films with different gallium contents grown using the co-evaporation technique. Temperature-dependent photoluminescence (PL) and high-resolution X-ray diffraction measurements were performed. The PL emission peaks observed around 1.0-1.2 eV are attributed to donor-acceptor pair luminescence. These donor-acceptor pair emissions are considered to originate from relatively shallow acceptor and donor energy levels. In addition, the X-ray diffraction spectra of the samples are simulated using a theoretical model. From the analysis, it is found that the sample with higher gallium content exhibits smaller grain size and the microstructure size uniformity is reduced. The theoretical calculation result is consistent with the experimental results derived from the PL spectra. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	American English
Pages (from-to)	1388-1391
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	9
Issue number	6
DOIs	https://doi.org/10.1002/pssc.201100686
State	Published - 2012

Keywords

CIGS thin film
Co-evaporation
Photoluminescence
X-ray diffraction

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10.1002/pssc.201100686

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@article{f780719b6cf94b1e9239c1298330a405,

title = "The structural and material properties of Cu(In,Ga)Se2 thin films",

abstract = "We report on the structural and material properties of Cu-poor CuIn1-xGax Se2 (CIGS) thin films with different gallium contents grown using the co-evaporation technique. Temperature-dependent photoluminescence (PL) and high-resolution X-ray diffraction measurements were performed. The PL emission peaks observed around 1.0-1.2 eV are attributed to donor-acceptor pair luminescence. These donor-acceptor pair emissions are considered to originate from relatively shallow acceptor and donor energy levels. In addition, the X-ray diffraction spectra of the samples are simulated using a theoretical model. From the analysis, it is found that the sample with higher gallium content exhibits smaller grain size and the microstructure size uniformity is reduced. The theoretical calculation result is consistent with the experimental results derived from the PL spectra. {\textcopyright} 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

keywords = "CIGS thin film, Co-evaporation, Photoluminescence, X-ray diffraction",

author = "Y.-F. Wu and H.-P. Hsu and Jer-Chyi Wang and H.-Y. Chen",

year = "2012",

doi = "10.1002/pssc.201100686",

language = "American English",

volume = "9",

pages = "1388--1391",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "6",

}

TY - JOUR

T1 - The structural and material properties of Cu(In,Ga)Se2 thin films

AU - Wu, Y.-F.

AU - Hsu, H.-P.

AU - Wang, Jer-Chyi

AU - Chen, H.-Y.

PY - 2012

Y1 - 2012

N2 - We report on the structural and material properties of Cu-poor CuIn1-xGax Se2 (CIGS) thin films with different gallium contents grown using the co-evaporation technique. Temperature-dependent photoluminescence (PL) and high-resolution X-ray diffraction measurements were performed. The PL emission peaks observed around 1.0-1.2 eV are attributed to donor-acceptor pair luminescence. These donor-acceptor pair emissions are considered to originate from relatively shallow acceptor and donor energy levels. In addition, the X-ray diffraction spectra of the samples are simulated using a theoretical model. From the analysis, it is found that the sample with higher gallium content exhibits smaller grain size and the microstructure size uniformity is reduced. The theoretical calculation result is consistent with the experimental results derived from the PL spectra. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - We report on the structural and material properties of Cu-poor CuIn1-xGax Se2 (CIGS) thin films with different gallium contents grown using the co-evaporation technique. Temperature-dependent photoluminescence (PL) and high-resolution X-ray diffraction measurements were performed. The PL emission peaks observed around 1.0-1.2 eV are attributed to donor-acceptor pair luminescence. These donor-acceptor pair emissions are considered to originate from relatively shallow acceptor and donor energy levels. In addition, the X-ray diffraction spectra of the samples are simulated using a theoretical model. From the analysis, it is found that the sample with higher gallium content exhibits smaller grain size and the microstructure size uniformity is reduced. The theoretical calculation result is consistent with the experimental results derived from the PL spectra. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

KW - CIGS thin film

KW - Co-evaporation

KW - Photoluminescence

KW - X-ray diffraction

U2 - 10.1002/pssc.201100686

DO - 10.1002/pssc.201100686

M3 - Journal Article

SN - 1862-6351

VL - 9

SP - 1388

EP - 1391

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 6

ER -

The structural and material properties of Cu(In,Ga)Se2 thin films

Abstract

Keywords

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