The study of CIGS absorption layer grown by two-step growth method for thin-film solar cell

Li Zen Hsieh; Xi Ming Duan; Ming Jer Jeng

doi:10.4028/www.scientific.net/AMM.418.238

The study of CIGS absorption layer grown by two-step growth method for thin-film solar cell

Li Zen Hsieh
, Xi Ming Duan
, Ming Jer Jeng

Department of Electronic Engineering

Hwa Hsia University of Technology
National Defense University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Two-step growth method was used for CuInGaSe₂,(CIGS) absorption layer in this study. The layer was first deposited by thermal evaporator to use indium and gallium sauces at a vacuum of 5 × 10^-6 torr and secondly, the deposited thin film was enclosed in a quartz cartridge for the first selenization. The second selenization process was coated by copper and then annealed again in a furnace. Finding best precursor for thin film solar cells was analyzed by scanning electron microscope (SEM), X-ray diffraction analyzer (XRD) and energy dispersive spectrometer (EDS). Copy; (2013) Trans Tech Publications, Switzerland.

Original language	English
Title of host publication	Applied Mechatronics and Android Robotics
Pages	238-241
Number of pages	4
DOIs	https://doi.org/10.4028/www.scientific.net/AMM.418.238
State	Published - 2013
Event	International Conference on Applied Mechatronics and Android Robotics, ICAMAR 2013 - Taipei, Taiwan Duration: 13 07 2013 → 14 07 2013

Publication series

Name	Applied Mechanics and Materials
Volume	418
ISSN (Print)	1660-9336
ISSN (Electronic)	1662-7482

Conference

Conference	International Conference on Applied Mechatronics and Android Robotics, ICAMAR 2013
Country/Territory	Taiwan
City	Taipei
Period	13/07/13 → 14/07/13

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

CIGS
Selenization
Solar cell

Access to Document

10.4028/www.scientific.net/AMM.418.238

Cite this

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title = "The study of CIGS absorption layer grown by two-step growth method for thin-film solar cell",

abstract = "Two-step growth method was used for CuInGaSe2,(CIGS) absorption layer in this study. The layer was first deposited by thermal evaporator to use indium and gallium sauces at a vacuum of 5 × 10-6 torr and secondly, the deposited thin film was enclosed in a quartz cartridge for the first selenization. The second selenization process was coated by copper and then annealed again in a furnace. Finding best precursor for thin film solar cells was analyzed by scanning electron microscope (SEM), X-ray diffraction analyzer (XRD) and energy dispersive spectrometer (EDS). Copy; (2013) Trans Tech Publications, Switzerland.",

keywords = "CIGS, Selenization, Solar cell",

author = "Hsieh, \{Li Zen\} and Duan, \{Xi Ming\} and Jeng, \{Ming Jer\}",

year = "2013",

doi = "10.4028/www.scientific.net/AMM.418.238",

language = "英语",

isbn = "9783037858745",

series = "Applied Mechanics and Materials",

pages = "238--241",

booktitle = "Applied Mechatronics and Android Robotics",

note = "International Conference on Applied Mechatronics and Android Robotics, ICAMAR 2013 ; Conference date: 13-07-2013 Through 14-07-2013",

}

Hsieh, LZ, Duan, XM & Jeng, MJ 2013, The study of CIGS absorption layer grown by two-step growth method for thin-film solar cell. in Applied Mechatronics and Android Robotics. Applied Mechanics and Materials, vol. 418, pp. 238-241, International Conference on Applied Mechatronics and Android Robotics, ICAMAR 2013, Taipei, Taiwan, 13/07/13. https://doi.org/10.4028/www.scientific.net/AMM.418.238

TY - GEN

T1 - The study of CIGS absorption layer grown by two-step growth method for thin-film solar cell

AU - Hsieh, Li Zen

AU - Duan, Xi Ming

AU - Jeng, Ming Jer

PY - 2013

Y1 - 2013

N2 - Two-step growth method was used for CuInGaSe2,(CIGS) absorption layer in this study. The layer was first deposited by thermal evaporator to use indium and gallium sauces at a vacuum of 5 × 10-6 torr and secondly, the deposited thin film was enclosed in a quartz cartridge for the first selenization. The second selenization process was coated by copper and then annealed again in a furnace. Finding best precursor for thin film solar cells was analyzed by scanning electron microscope (SEM), X-ray diffraction analyzer (XRD) and energy dispersive spectrometer (EDS). Copy; (2013) Trans Tech Publications, Switzerland.

AB - Two-step growth method was used for CuInGaSe2,(CIGS) absorption layer in this study. The layer was first deposited by thermal evaporator to use indium and gallium sauces at a vacuum of 5 × 10-6 torr and secondly, the deposited thin film was enclosed in a quartz cartridge for the first selenization. The second selenization process was coated by copper and then annealed again in a furnace. Finding best precursor for thin film solar cells was analyzed by scanning electron microscope (SEM), X-ray diffraction analyzer (XRD) and energy dispersive spectrometer (EDS). Copy; (2013) Trans Tech Publications, Switzerland.

KW - CIGS

KW - Selenization

KW - Solar cell

UR - https://www.scopus.com/pages/publications/84886259734

U2 - 10.4028/www.scientific.net/AMM.418.238

DO - 10.4028/www.scientific.net/AMM.418.238

M3 - 会议稿件

AN - SCOPUS:84886259734

SN - 9783037858745

T3 - Applied Mechanics and Materials

SP - 238

EP - 241

BT - Applied Mechatronics and Android Robotics

T2 - International Conference on Applied Mechatronics and Android Robotics, ICAMAR 2013

Y2 - 13 July 2013 through 14 July 2013

ER -

The study of CIGS absorption layer grown by two-step growth method for thin-film solar cell

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

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