The super nernst phenomena of hydrogen ion sensor with HfO 2/Si3N4/SiO2 multiple sensing membranes

Jer Chyi Wang*, Tseng Fu Lu, Chieh Yuan Liu, Chia Ming Yang, Chao Sung Lai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work a systematic investigates the behavior and mechanism of pH-sensing using an electrolyte-insulator-semiconductor (EIS) structure with multiple sputtered-HfO2/Si3N4/SiO2 sensing membranes. Capacitance-voltage (C-V) measurements were used to characterize the sensing properties. A pH-response over the Nernstian limit of the proposed device is achieved after programming. An increase of pHsensitivity with programming voltage and time is observed. Moreover, the pH-response is stable after 100 program/erase (P/E) cycles and the drift rate after programming is satisfactory. The high pH-sensitivity of this multiple sensing membrane EIS structure suggests the possibility of detecting small pH variations in bio-sensor applications.

Original languageEnglish
Title of host publicationISOB 2011 - Proceedings of the 1st International Symposium on Bioengineering
Pages10-15
Number of pages6
DOIs
StatePublished - 2011
Event1st International Symposium on Bioengineering, ISOB 2011 - Singapore, Singapore
Duration: 19 01 201119 01 2011

Publication series

NameISOB 2011 - Proceedings of the 1st International Symposium ISOB 2011 - Proceedings of the 1st International Symposium on Bioengineering

Conference

Conference1st International Symposium on Bioengineering, ISOB 2011
Country/TerritorySingapore
CitySingapore
Period19/01/1119/01/11

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