The surface site de-hydration mechanism for Si3N4 sensing membrane by post-baking treatment

Chao Sung Lai*, Chia Ming Yang, Chili Yao Wang, Cheng En Lue, T. F. Lue, Hung Pin Ko, T. M. Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work presented a post-baking treatment effect on Si3N4 sensing membrane for the pH response. Special measurement sequences were proposed to verify the surface site activation and de-hydration. Sensitivity was improved by pH4 buffer solution immersion. However, sensitivities were decreased 3-8.5 mV/pH and 1-2.8mV/pH by first and second baking cycle respectively. Higher baking temperature made the sensitivity decrease more. It was due to ion and surface site exchange and repaired the dangling bond on sensing membrane during buffer immersion. The post-baking treatment broke some active sites by thermal energy. The higher baking temperature provided more thermal energy to break active sites and degrade more sensitivity. A novel physical model was proposed for the activation and de-hydration behavior.

Original languageEnglish
Title of host publication2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
Pages298-301
Number of pages4
StatePublished - 2004
Event2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 - Kuala Lumpur, Malaysia
Duration: 04 12 200409 12 2004

Publication series

NameProceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics

Conference

Conference2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
Country/TerritoryMalaysia
CityKuala Lumpur
Period04/12/0409/12/04

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