The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing

Chyuan Haur Kao; Chao Sung Lai; Chung Len Lee

doi:10.1109/55.641434

The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing

Chyuan Haur Kao^*
, Chao Sung Lai
, Chung Len Lee

^*Corresponding author for this work

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Journal Article › peer-review

17 Scopus citations

Abstract

A TEOS oxide deposited on the phosphorus in situ doped polysilicon annealed with RTA is shown to have good electrical characteristics such as a high breakdown field (>12 MV/cm), especially for the positive bias, and a large Qbd (26 Coul/cm²). The improvement is believed to be due to the relatively smooth surface of the in situ doped polysilicon and the reduction of the trapping density by RTA.

Original language	English
Pages (from-to)	526-528
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	18
Issue number	11
DOIs	https://doi.org/10.1109/55.641434
State	Published - 11 1997
Externally published	Yes

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title = "The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing",

abstract = "A TEOS oxide deposited on the phosphorus in situ doped polysilicon annealed with RTA is shown to have good electrical characteristics such as a high breakdown field (>12 MV/cm), especially for the positive bias, and a large Qbd (26 Coul/cm2). The improvement is believed to be due to the relatively smooth surface of the in situ doped polysilicon and the reduction of the trapping density by RTA.",

author = "Kao, \{Chyuan Haur\} and Lai, \{Chao Sung\} and Lee, \{Chung Len\}",

year = "1997",

month = nov,

doi = "10.1109/55.641434",

language = "英语",

volume = "18",

pages = "526--528",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing

AU - Kao, Chyuan Haur

AU - Lai, Chao Sung

AU - Lee, Chung Len

PY - 1997/11

Y1 - 1997/11

N2 - A TEOS oxide deposited on the phosphorus in situ doped polysilicon annealed with RTA is shown to have good electrical characteristics such as a high breakdown field (>12 MV/cm), especially for the positive bias, and a large Qbd (26 Coul/cm2). The improvement is believed to be due to the relatively smooth surface of the in situ doped polysilicon and the reduction of the trapping density by RTA.

AB - A TEOS oxide deposited on the phosphorus in situ doped polysilicon annealed with RTA is shown to have good electrical characteristics such as a high breakdown field (>12 MV/cm), especially for the positive bias, and a large Qbd (26 Coul/cm2). The improvement is believed to be due to the relatively smooth surface of the in situ doped polysilicon and the reduction of the trapping density by RTA.

UR - https://www.scopus.com/pages/publications/0031273467

U2 - 10.1109/55.641434

DO - 10.1109/55.641434

M3 - 文章

AN - SCOPUS:0031273467

SN - 0741-3106

VL - 18

SP - 526

EP - 528

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

ER -

The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing

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