The TEOS oxide deposited on phosphorus in-situ/POCl3 doped polysilicon with rapid thermal annealing in N2O

Chyuan Haur Kao; Chao Sung Lai; Chung Len Lee

doi:10.1109/16.711357

The TEOS oxide deposited on phosphorus in-situ/POCl₃ doped polysilicon with rapid thermal annealing in N₂O

Chyuan Haur Kao, Chao Sung Lai, Chung Len Lee^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

20 Scopus citations

Abstract

This work presents a TEOS oxide deposited on the phosphorus-//i-, s#H doped polysilicon with rapid thermal N2Ü annealing. The oxide exhibits good electron trapping characteristics with a charge-to-breakdown (Qbd) up to 110 C/cni2. It is due to the good polysilicon/oxide interface morphology obtained by replacing POC13 doping with in-situ doping and the rapid thermal annealing in N₂O. In addition, the N₂O annealing densities the deposited oxide and incorporates nitrogen into the oxide and at the polysilicon/oxide interface, thus improving the electrical characteristics.

Original language	English
Pages (from-to)	1927-1933
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	45
Issue number	9
DOIs	https://doi.org/10.1109/16.711357
State	Published - 1998
Externally published	Yes

Keywords

No, phosphorus-in-situ
TEOS

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10.1109/16.711357

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@article{dd0de4ad6e594995897d9b127c8c7add,

title = "The TEOS oxide deposited on phosphorus in-situ/POCl3 doped polysilicon with rapid thermal annealing in N2O",

abstract = "This work presents a TEOS oxide deposited on the phosphorus-//i-, s\#H doped polysilicon with rapid thermal N2{\"U} annealing. The oxide exhibits good electron trapping characteristics with a charge-to-breakdown (Qbd) up to 110 C/cni2. It is due to the good polysilicon/oxide interface morphology obtained by replacing POC13 doping with in-situ doping and the rapid thermal annealing in N2O. In addition, the N2O annealing densities the deposited oxide and incorporates nitrogen into the oxide and at the polysilicon/oxide interface, thus improving the electrical characteristics.",

keywords = "No, phosphorus-in-situ, TEOS",

author = "Kao, \{Chyuan Haur\} and Lai, \{Chao Sung\} and Lee, \{Chung Len\}",

year = "1998",

doi = "10.1109/16.711357",

language = "英语",

volume = "45",

pages = "1927--1933",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - The TEOS oxide deposited on phosphorus in-situ/POCl3 doped polysilicon with rapid thermal annealing in N2O

AU - Kao, Chyuan Haur

AU - Lai, Chao Sung

AU - Lee, Chung Len

PY - 1998

Y1 - 1998

N2 - This work presents a TEOS oxide deposited on the phosphorus-//i-, s#H doped polysilicon with rapid thermal N2Ü annealing. The oxide exhibits good electron trapping characteristics with a charge-to-breakdown (Qbd) up to 110 C/cni2. It is due to the good polysilicon/oxide interface morphology obtained by replacing POC13 doping with in-situ doping and the rapid thermal annealing in N2O. In addition, the N2O annealing densities the deposited oxide and incorporates nitrogen into the oxide and at the polysilicon/oxide interface, thus improving the electrical characteristics.

AB - This work presents a TEOS oxide deposited on the phosphorus-//i-, s#H doped polysilicon with rapid thermal N2Ü annealing. The oxide exhibits good electron trapping characteristics with a charge-to-breakdown (Qbd) up to 110 C/cni2. It is due to the good polysilicon/oxide interface morphology obtained by replacing POC13 doping with in-situ doping and the rapid thermal annealing in N2O. In addition, the N2O annealing densities the deposited oxide and incorporates nitrogen into the oxide and at the polysilicon/oxide interface, thus improving the electrical characteristics.

KW - No, phosphorus-in-situ

KW - TEOS

UR - https://www.scopus.com/pages/publications/0032166569

U2 - 10.1109/16.711357

DO - 10.1109/16.711357

M3 - 文章

AN - SCOPUS:0032166569

SN - 0018-9383

VL - 45

SP - 1927

EP - 1933

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

ER -

The TEOS oxide deposited on phosphorus in-situ/POCl₃ doped polysilicon with rapid thermal annealing in N₂O

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Keywords

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