The thermal model for carrier hopping and retrapping in self-organized InAs quantum dot heterostructure

Ya Fen Wu*, Hui Tang Shen, Ray Min Lin, Tzer En Nee, Nien Tze Yeh, Tung Po Hsieh, Jiunn Chyi Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A steady-state thermal model based on a set of rate equations is proposed in this article. The carrier dynamics of the main components in quantum dot (QD) systems, including the intersublevels in InAs QDs, the wetting layer, and the GaAs barriers, are all described by the equations. The QD sizes distribution, carrier capture, carrier relaxation, thermal escape and retrapping are all taken into account in this model. Two InAs QD samples with different size distributions and uniformities were grown. The measured temperature dependent photoluminescence (PL) spectra of the samples are consistent with the computational results. Furthermore, we also analyze the relationships between the carrier dynamics and the full width at half maximum (FWHM) for the samples.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages647-648
Number of pages2
DOIs
StatePublished - 30 06 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 26 07 200430 07 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/TerritoryUnited States
CityFlagstaff, AZ
Period26/07/0430/07/04

Fingerprint

Dive into the research topics of 'The thermal model for carrier hopping and retrapping in self-organized InAs quantum dot heterostructure'. Together they form a unique fingerprint.

Cite this