TY - GEN
T1 - Thermal resistance and reliability of Low-Cost High-Power LED packages under WHTOL test
AU - Chen, C. H.
AU - Tsai, W. L.
AU - Tsai, M. Y.
PY - 2008
Y1 - 2008
N2 - The high-power Light Emitting Diode (LED) can be potentially used for general lighting to alleviate the global warming problem. However, the LED issues, associated with high cost, high junction temperature, low luminous efficiency, and low reliability, have to be resolved before becoming realized. Featuring low-junction-temperature and low-cost design, a novel high-power COP (Chip-on-Plate) LED package is proposed and its reliability under wet high temperature operation life (WHTOL) test is evaluated. The WHTOL test is with the condition of 85°C/85%RH and 350mA (power=1.22W) of forward current for 1008 hrs, specified in JESD22 Method AI0I-B. First of all, the thermal behaviors of the COP package are investigated by experimental measurement (with LED junction temperature tester and thermal couples), a thermal resistance circuit (TRC) method and a finite element method (FEM). The junction temperature (T jand surface temperature of the COP package are measured by the junction temperature tester and thermal couples, respectively. Furthermore, the reliability under WHTOL test is carried out. The results show that all COP packages with phosphorus in the silicone encapsulant failed after 309 hrs at WHTOL test, but all those without phosphorus passed for 1008 hrs. The failure sites are located at aluminum wire debonding to the chip and copper pad of the substrate. For the passing packages, their junction to air thermal resistances increase with the time of WHTOL by up to 12 °CIW. This is due to the decrease of the thermal conductivity of the die attach, resulting from the moisture absorption. The natural and forced convections in the chamber for WHTOL test give the same the junction-to-aluminum substrate thermal resistance, but different chip junction temperatures with a 19°C difference, which might result in different reliability data. Therefore, the standard test of WHTOL should specify flow conditions in the test chamber.
AB - The high-power Light Emitting Diode (LED) can be potentially used for general lighting to alleviate the global warming problem. However, the LED issues, associated with high cost, high junction temperature, low luminous efficiency, and low reliability, have to be resolved before becoming realized. Featuring low-junction-temperature and low-cost design, a novel high-power COP (Chip-on-Plate) LED package is proposed and its reliability under wet high temperature operation life (WHTOL) test is evaluated. The WHTOL test is with the condition of 85°C/85%RH and 350mA (power=1.22W) of forward current for 1008 hrs, specified in JESD22 Method AI0I-B. First of all, the thermal behaviors of the COP package are investigated by experimental measurement (with LED junction temperature tester and thermal couples), a thermal resistance circuit (TRC) method and a finite element method (FEM). The junction temperature (T jand surface temperature of the COP package are measured by the junction temperature tester and thermal couples, respectively. Furthermore, the reliability under WHTOL test is carried out. The results show that all COP packages with phosphorus in the silicone encapsulant failed after 309 hrs at WHTOL test, but all those without phosphorus passed for 1008 hrs. The failure sites are located at aluminum wire debonding to the chip and copper pad of the substrate. For the passing packages, their junction to air thermal resistances increase with the time of WHTOL by up to 12 °CIW. This is due to the decrease of the thermal conductivity of the die attach, resulting from the moisture absorption. The natural and forced convections in the chamber for WHTOL test give the same the junction-to-aluminum substrate thermal resistance, but different chip junction temperatures with a 19°C difference, which might result in different reliability data. Therefore, the standard test of WHTOL should specify flow conditions in the test chamber.
KW - Junction temperature
KW - LED
KW - Reliability
KW - Thermal
UR - http://www.scopus.com/inward/record.url?scp=64049110279&partnerID=8YFLogxK
U2 - 10.1109/EMAP.2008.4784281
DO - 10.1109/EMAP.2008.4784281
M3 - 会议稿件
AN - SCOPUS:64049110279
SN - 9781424436217
T3 - 2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008
SP - 271
EP - 276
BT - 2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008
T2 - 2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008
Y2 - 22 October 2008 through 24 October 2008
ER -