Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method

Kuang Po Hsueh; Po Wei Cheng; Wen Yen Lin; Hsien Chin Chiu; Hsiang Chun Wang; Jinn Kong Sheu; Yu Hsiang Yeh

doi:10.1557/opl.2014.836

Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method

Kuang Po Hsueh^*, Po Wei Cheng, Wen Yen Lin, Hsien Chin Chiu, Hsiang Chun Wang, Jinn Kong Sheu, Yu Hsiang Yeh

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A radio-frequency magnetron sputtering technique and subsequent rapid thermal annealing (RTA) at 600, 700, 800, and 900 °C were implemented to grow high-quality Ga-doped Mg_xZn_1-xO (GMZO) epi-layers. The GMZO films were deposited using a radio-frequency magnetron sputtering system and a 4 inch ZnO/MgO/Ga₂O₃ (75/20/5 wt %) target. The Hall results, X-ray diffraction (XRD), and transmittance were determined and are reported in this paper. The Hall results indicated that the increase in mobility was likely caused by the improved crystallization in the GMZO films after thermal annealing. The XRD results revealed that Mg_xZn_1-xO (111) and MgO₂ (200) peaks were obtained in the GMZO films. The absorption edges of the as-grown and annealed GMZO films shifted toward the short wavelength of 373 ran at a transmittance of 90%. According to these results, GMZO films are feasible for forming transparent contact layers for near-ultraviolet light-emitting diodes.

Original language	English
Title of host publication	Synthesis, Characterization, and Applications of Functional Materials - Thin Films and Nanostructures
Editors	Quanxi Jia, Dhananjay Kumar, Xavier Obradors, Kaushal K. Singh, Valentin Craciun, Maryline Guilloux-Viry, Menka Jain, Hiromitsu Kozuka, Sanjay Mathur
Publisher	Materials Research Society
Pages	41-44
Number of pages	4
ISBN (Electronic)	9781605116525
DOIs	https://doi.org/10.1557/opl.2014.836
State	Published - 2014
Event	2014 MRS Spring Meeting - San Francisco, United States Duration: 21 04 2014 → 25 04 2014

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1675
ISSN (Print)	0272-9172

Conference

Conference	2014 MRS Spring Meeting
Country/Territory	United States
City	San Francisco
Period	21/04/14 → 25/04/14

Bibliographical note

Publisher Copyright:
© 2014 Materials Research Society.

Access to Document

10.1557/opl.2014.836

Cite this

Hsueh, K. P., Cheng, P. W., Lin, W. Y., Chiu, H. C., Wang, H. C., Sheu, J. K., & Yeh, Y. H. (2014). Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method. In Q. Jia, D. Kumar, X. Obradors, K. K. Singh, V. Craciun, M. Guilloux-Viry, M. Jain, H. Kozuka, & S. Mathur (Eds.), Synthesis, Characterization, and Applications of Functional Materials - Thin Films and Nanostructures (pp. 41-44). (Materials Research Society Symposium Proceedings; Vol. 1675). Materials Research Society. https://doi.org/10.1557/opl.2014.836

Hsueh, Kuang Po ; Cheng, Po Wei ; Lin, Wen Yen et al. / Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method. Synthesis, Characterization, and Applications of Functional Materials - Thin Films and Nanostructures. editor / Quanxi Jia ; Dhananjay Kumar ; Xavier Obradors ; Kaushal K. Singh ; Valentin Craciun ; Maryline Guilloux-Viry ; Menka Jain ; Hiromitsu Kozuka ; Sanjay Mathur. Materials Research Society, 2014. pp. 41-44 (Materials Research Society Symposium Proceedings).

@inproceedings{2ba2f7f34ccd4b848e8adb8d04d536d1,

title = "Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method",

abstract = "A radio-frequency magnetron sputtering technique and subsequent rapid thermal annealing (RTA) at 600, 700, 800, and 900 °C were implemented to grow high-quality Ga-doped MgxZn1-xO (GMZO) epi-layers. The GMZO films were deposited using a radio-frequency magnetron sputtering system and a 4 inch ZnO/MgO/Ga2O3 (75/20/5 wt %) target. The Hall results, X-ray diffraction (XRD), and transmittance were determined and are reported in this paper. The Hall results indicated that the increase in mobility was likely caused by the improved crystallization in the GMZO films after thermal annealing. The XRD results revealed that MgxZn1-xO (111) and MgO2 (200) peaks were obtained in the GMZO films. The absorption edges of the as-grown and annealed GMZO films shifted toward the short wavelength of 373 ran at a transmittance of 90%. According to these results, GMZO films are feasible for forming transparent contact layers for near-ultraviolet light-emitting diodes.",

author = "Hsueh, {Kuang Po} and Cheng, {Po Wei} and Lin, {Wen Yen} and Chiu, {Hsien Chin} and Wang, {Hsiang Chun} and Sheu, {Jinn Kong} and Yeh, {Yu Hsiang}",

note = "Publisher Copyright: {\textcopyright} 2014 Materials Research Society.; 2014 MRS Spring Meeting ; Conference date: 21-04-2014 Through 25-04-2014",

year = "2014",

doi = "10.1557/opl.2014.836",

language = "英语",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "41--44",

editor = "Quanxi Jia and Dhananjay Kumar and Xavier Obradors and Singh, {Kaushal K.} and Valentin Craciun and Maryline Guilloux-Viry and Menka Jain and Hiromitsu Kozuka and Sanjay Mathur",

booktitle = "Synthesis, Characterization, and Applications of Functional Materials - Thin Films and Nanostructures",

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Hsueh, KP, Cheng, PW, Lin, WY, Chiu, HC, Wang, HC, Sheu, JK & Yeh, YH 2014, Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method. in Q Jia, D Kumar, X Obradors, KK Singh, V Craciun, M Guilloux-Viry, M Jain, H Kozuka & S Mathur (eds), Synthesis, Characterization, and Applications of Functional Materials - Thin Films and Nanostructures. Materials Research Society Symposium Proceedings, vol. 1675, Materials Research Society, pp. 41-44, 2014 MRS Spring Meeting, San Francisco, United States, 21/04/14. https://doi.org/10.1557/opl.2014.836

Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method. / Hsueh, Kuang Po; Cheng, Po Wei; Lin, Wen Yen et al.
Synthesis, Characterization, and Applications of Functional Materials - Thin Films and Nanostructures. ed. / Quanxi Jia; Dhananjay Kumar; Xavier Obradors; Kaushal K. Singh; Valentin Craciun; Maryline Guilloux-Viry; Menka Jain; Hiromitsu Kozuka; Sanjay Mathur. Materials Research Society, 2014. p. 41-44 (Materials Research Society Symposium Proceedings; Vol. 1675).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method

AU - Hsueh, Kuang Po

AU - Cheng, Po Wei

AU - Lin, Wen Yen

AU - Chiu, Hsien Chin

AU - Wang, Hsiang Chun

AU - Sheu, Jinn Kong

AU - Yeh, Yu Hsiang

PY - 2014

Y1 - 2014

N2 - A radio-frequency magnetron sputtering technique and subsequent rapid thermal annealing (RTA) at 600, 700, 800, and 900 °C were implemented to grow high-quality Ga-doped MgxZn1-xO (GMZO) epi-layers. The GMZO films were deposited using a radio-frequency magnetron sputtering system and a 4 inch ZnO/MgO/Ga2O3 (75/20/5 wt %) target. The Hall results, X-ray diffraction (XRD), and transmittance were determined and are reported in this paper. The Hall results indicated that the increase in mobility was likely caused by the improved crystallization in the GMZO films after thermal annealing. The XRD results revealed that MgxZn1-xO (111) and MgO2 (200) peaks were obtained in the GMZO films. The absorption edges of the as-grown and annealed GMZO films shifted toward the short wavelength of 373 ran at a transmittance of 90%. According to these results, GMZO films are feasible for forming transparent contact layers for near-ultraviolet light-emitting diodes.

AB - A radio-frequency magnetron sputtering technique and subsequent rapid thermal annealing (RTA) at 600, 700, 800, and 900 °C were implemented to grow high-quality Ga-doped MgxZn1-xO (GMZO) epi-layers. The GMZO films were deposited using a radio-frequency magnetron sputtering system and a 4 inch ZnO/MgO/Ga2O3 (75/20/5 wt %) target. The Hall results, X-ray diffraction (XRD), and transmittance were determined and are reported in this paper. The Hall results indicated that the increase in mobility was likely caused by the improved crystallization in the GMZO films after thermal annealing. The XRD results revealed that MgxZn1-xO (111) and MgO2 (200) peaks were obtained in the GMZO films. The absorption edges of the as-grown and annealed GMZO films shifted toward the short wavelength of 373 ran at a transmittance of 90%. According to these results, GMZO films are feasible for forming transparent contact layers for near-ultraviolet light-emitting diodes.

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U2 - 10.1557/opl.2014.836

DO - 10.1557/opl.2014.836

M3 - 会议稿件

AN - SCOPUS:84922471022

T3 - Materials Research Society Symposium Proceedings

SP - 41

EP - 44

BT - Synthesis, Characterization, and Applications of Functional Materials - Thin Films and Nanostructures

A2 - Jia, Quanxi

A2 - Kumar, Dhananjay

A2 - Obradors, Xavier

A2 - Singh, Kaushal K.

A2 - Craciun, Valentin

A2 - Guilloux-Viry, Maryline

A2 - Jain, Menka

A2 - Kozuka, Hiromitsu

A2 - Mathur, Sanjay

PB - Materials Research Society

T2 - 2014 MRS Spring Meeting

Y2 - 21 April 2014 through 25 April 2014

ER -

Hsueh KP, Cheng PW, Lin WY, Chiu HC, Wang HC, Sheu JK et al. Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method. In Jia Q, Kumar D, Obradors X, Singh KK, Craciun V, Guilloux-Viry M, Jain M, Kozuka H, Mathur S, editors, Synthesis, Characterization, and Applications of Functional Materials - Thin Films and Nanostructures. Materials Research Society. 2014. p. 41-44. (Materials Research Society Symposium Proceedings). doi: 10.1557/opl.2014.836

Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method

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