Thermally activated carrier dynamics and photoluminescence in self-assembled InAs quantum dots

Jiunn Chyi Lee; Yeu Jent Hu; Ya Fen Wu; Jia Hui Fang; Tzer En Nee; Hui Tang Shen; Jen Cheng Wang

doi:10.1109/ICSICT.2006.306609

Thermally activated carrier dynamics and photoluminescence in self-assembled InAs quantum dots

Jiunn Chyi Lee^*, Yeu Jent Hu, Ya Fen Wu, Jia Hui Fang, Tzer En Nee, Hui Tang Shen, Jen Cheng Wang

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Two InAs/GaAs quantum dot (QD) heterostructures with different InAs active layer thickness were carried out. It is found that thickening the InAs active layer will enhance the dot density. By analyzing the temperature dependence of the photoluminescence (PL) spectra of the samples, the carrier thermal emission and recapture among dots affect the PL spectra of high density QDs evidently. Besides, the transferring rate of carriers from wetting layer into QDs plays an influential role in the dependence of the PL spectra on temperature for the low density QDs sample.

Original language	English
Title of host publication	ICSICT-2006
Subtitle of host publication	2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Publisher	IEEE Computer Society
Pages	965-967
Number of pages	3
ISBN (Print)	1424401615, 9781424401611
DOIs	https://doi.org/10.1109/ICSICT.2006.306609
State	Published - 2006
Event	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: 23 10 2006 → 26 10 2006

Publication series

Name	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	23/10/06 → 26/10/06

Access to Document

10.1109/ICSICT.2006.306609

Cite this

Lee, J. C., Hu, Y. J., Wu, Y. F., Fang, J. H., Nee, T. E., Shen, H. T., & Wang, J. C. (2006). Thermally activated carrier dynamics and photoluminescence in self-assembled InAs quantum dots. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 965-967). Article 4098292 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306609

Lee, Jiunn Chyi ; Hu, Yeu Jent ; Wu, Ya Fen et al. / Thermally activated carrier dynamics and photoluminescence in self-assembled InAs quantum dots. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. pp. 965-967 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

@inproceedings{2aa05025578b4eaea49c99b884189e75,

title = "Thermally activated carrier dynamics and photoluminescence in self-assembled InAs quantum dots",

abstract = "Two InAs/GaAs quantum dot (QD) heterostructures with different InAs active layer thickness were carried out. It is found that thickening the InAs active layer will enhance the dot density. By analyzing the temperature dependence of the photoluminescence (PL) spectra of the samples, the carrier thermal emission and recapture among dots affect the PL spectra of high density QDs evidently. Besides, the transferring rate of carriers from wetting layer into QDs plays an influential role in the dependence of the PL spectra on temperature for the low density QDs sample.",

author = "Lee, \{Jiunn Chyi\} and Hu, \{Yeu Jent\} and Wu, \{Ya Fen\} and Fang, \{Jia Hui\} and Nee, \{Tzer En\} and Shen, \{Hui Tang\} and Wang, \{Jen Cheng\}",

year = "2006",

doi = "10.1109/ICSICT.2006.306609",

language = "英语",

isbn = "1424401615",

series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

publisher = "IEEE Computer Society",

pages = "965--967",

booktitle = "ICSICT-2006",

address = "美国",

note = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 23-10-2006 Through 26-10-2006",

}

Lee, JC, Hu, YJ, Wu, YF, Fang, JH, Nee, TE, Shen, HT & Wang, JC 2006, Thermally activated carrier dynamics and photoluminescence in self-assembled InAs quantum dots. in ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098292, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, IEEE Computer Society, pp. 965-967, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 23/10/06. https://doi.org/10.1109/ICSICT.2006.306609

Thermally activated carrier dynamics and photoluminescence in self-assembled InAs quantum dots. / Lee, Jiunn Chyi; Hu, Yeu Jent; Wu, Ya Fen et al.
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. p. 965-967 4098292 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Thermally activated carrier dynamics and photoluminescence in self-assembled InAs quantum dots

AU - Lee, Jiunn Chyi

AU - Hu, Yeu Jent

AU - Wu, Ya Fen

AU - Fang, Jia Hui

AU - Nee, Tzer En

AU - Shen, Hui Tang

AU - Wang, Jen Cheng

PY - 2006

Y1 - 2006

N2 - Two InAs/GaAs quantum dot (QD) heterostructures with different InAs active layer thickness were carried out. It is found that thickening the InAs active layer will enhance the dot density. By analyzing the temperature dependence of the photoluminescence (PL) spectra of the samples, the carrier thermal emission and recapture among dots affect the PL spectra of high density QDs evidently. Besides, the transferring rate of carriers from wetting layer into QDs plays an influential role in the dependence of the PL spectra on temperature for the low density QDs sample.

AB - Two InAs/GaAs quantum dot (QD) heterostructures with different InAs active layer thickness were carried out. It is found that thickening the InAs active layer will enhance the dot density. By analyzing the temperature dependence of the photoluminescence (PL) spectra of the samples, the carrier thermal emission and recapture among dots affect the PL spectra of high density QDs evidently. Besides, the transferring rate of carriers from wetting layer into QDs plays an influential role in the dependence of the PL spectra on temperature for the low density QDs sample.

UR - https://www.scopus.com/pages/publications/34547321818

U2 - 10.1109/ICSICT.2006.306609

DO - 10.1109/ICSICT.2006.306609

M3 - 会议稿件

AN - SCOPUS:34547321818

SN - 1424401615

SN - 9781424401611

T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

SP - 965

EP - 967

BT - ICSICT-2006

PB - IEEE Computer Society

T2 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology

Y2 - 23 October 2006 through 26 October 2006

ER -

Lee JC, Hu YJ, Wu YF, Fang JH, Nee TE, Shen HT et al. Thermally activated carrier dynamics and photoluminescence in self-assembled InAs quantum dots. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society. 2006. p. 965-967. 4098292. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2006.306609

Thermally activated carrier dynamics and photoluminescence in self-assembled InAs quantum dots

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