Thickness effect of IGZO layer in light-addressable potentiometric sensor

Chun Hui Chen; Chia Ming Yang; Liann Be Chang; Chao Sung Lai

doi:10.1109/AM-FPD.2016.7543666

Thickness effect of IGZO layer in light-addressable potentiometric sensor

Chun Hui Chen, Chia Ming Yang, Liann Be Chang, Chao Sung Lai

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The thickness effect of In-Ga-Zn oxide (IGZO) semiconductor layer is investigated for pH sensing in light-addressable potentiometric sensor (LAPS). pH sensing membrane is 45 nm-thick NbOx, which is directly on IGZO/ITO/glass substrate. The thickness of IGZO layer is determined by time-mode control in reactive rf sputtering. The highest photovoltage and operation frequency can be obtained in the IGZO thickness of 300 nm. pH sensitivity is about 65 mV/pH with ac signal frequency at 1 kHz. For better stability in hysteresis, further investigations on sensing membrane optimization are suggested.

Original language	English
Title of host publication	Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	203-205
Number of pages	3
ISBN (Electronic)	9784990875312
DOIs	https://doi.org/10.1109/AM-FPD.2016.7543666
State	Published - 15 08 2016
Event	23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 - Kyoto, Japan Duration: 06 07 2016 → 08 07 2016

Publication series

Name	Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Conference

Conference	23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016
Country/Territory	Japan
City	Kyoto
Period	06/07/16 → 08/07/16

Bibliographical note

Publisher Copyright:
© 2016 FTFMD.

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10.1109/AM-FPD.2016.7543666

Cite this

Chen, C. H., Yang, C. M., Chang, L. B., & Lai, C. S. (2016). Thickness effect of IGZO layer in light-addressable potentiometric sensor. In Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 203-205). Article 7543666 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/AM-FPD.2016.7543666

Chen, Chun Hui ; Yang, Chia Ming ; Chang, Liann Be et al. / Thickness effect of IGZO layer in light-addressable potentiometric sensor. Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 203-205 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

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title = "Thickness effect of IGZO layer in light-addressable potentiometric sensor",

abstract = "The thickness effect of In-Ga-Zn oxide (IGZO) semiconductor layer is investigated for pH sensing in light-addressable potentiometric sensor (LAPS). pH sensing membrane is 45 nm-thick NbOx, which is directly on IGZO/ITO/glass substrate. The thickness of IGZO layer is determined by time-mode control in reactive rf sputtering. The highest photovoltage and operation frequency can be obtained in the IGZO thickness of 300 nm. pH sensitivity is about 65 mV/pH with ac signal frequency at 1 kHz. For better stability in hysteresis, further investigations on sensing membrane optimization are suggested.",

author = "Chen, {Chun Hui} and Yang, {Chia Ming} and Chang, {Liann Be} and Lai, {Chao Sung}",

note = "Publisher Copyright: {\textcopyright} 2016 FTFMD.; 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 ; Conference date: 06-07-2016 Through 08-07-2016",

year = "2016",

month = aug,

day = "15",

doi = "10.1109/AM-FPD.2016.7543666",

language = "英语",

series = "Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Chen, CH, Yang, CM, Chang, LB & Lai, CS 2016, Thickness effect of IGZO layer in light-addressable potentiometric sensor. in Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials., 7543666, Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Institute of Electrical and Electronics Engineers Inc., pp. 203-205, 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016, Kyoto, Japan, 06/07/16. https://doi.org/10.1109/AM-FPD.2016.7543666

Thickness effect of IGZO layer in light-addressable potentiometric sensor. / Chen, Chun Hui; Yang, Chia Ming; Chang, Liann Be et al.
Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2016. p. 203-205 7543666 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Thickness effect of IGZO layer in light-addressable potentiometric sensor

AU - Chen, Chun Hui

AU - Yang, Chia Ming

AU - Chang, Liann Be

AU - Lai, Chao Sung

PY - 2016/8/15

Y1 - 2016/8/15

N2 - The thickness effect of In-Ga-Zn oxide (IGZO) semiconductor layer is investigated for pH sensing in light-addressable potentiometric sensor (LAPS). pH sensing membrane is 45 nm-thick NbOx, which is directly on IGZO/ITO/glass substrate. The thickness of IGZO layer is determined by time-mode control in reactive rf sputtering. The highest photovoltage and operation frequency can be obtained in the IGZO thickness of 300 nm. pH sensitivity is about 65 mV/pH with ac signal frequency at 1 kHz. For better stability in hysteresis, further investigations on sensing membrane optimization are suggested.

AB - The thickness effect of In-Ga-Zn oxide (IGZO) semiconductor layer is investigated for pH sensing in light-addressable potentiometric sensor (LAPS). pH sensing membrane is 45 nm-thick NbOx, which is directly on IGZO/ITO/glass substrate. The thickness of IGZO layer is determined by time-mode control in reactive rf sputtering. The highest photovoltage and operation frequency can be obtained in the IGZO thickness of 300 nm. pH sensitivity is about 65 mV/pH with ac signal frequency at 1 kHz. For better stability in hysteresis, further investigations on sensing membrane optimization are suggested.

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DO - 10.1109/AM-FPD.2016.7543666

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T3 - Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

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BT - Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

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Chen CH, Yang CM, Chang LB, Lai CS. Thickness effect of IGZO layer in light-addressable potentiometric sensor. In Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc. 2016. p. 203-205. 7543666. (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). doi: 10.1109/AM-FPD.2016.7543666

Thickness effect of IGZO layer in light-addressable potentiometric sensor

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