Thickness effects of ZnO thin film on the performance of tri-iodide perovskite absorber based photovoltaics

Kun Mu Lee, Sheng Hsiung Chang*, Kai Hung Wang, Chun Ming Chang, Hsin Ming Cheng, Chi Chung Kei, Zong Liang Tseng, Chun Guey Wu

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

43 Scopus citations

Abstract

Comprehensive studies were carried out to understand the thickness effects of ZnO thin films for tri-iodide perovskite absorber (TPA) based photovoltaics, including the absorption spectrum, photoluminescence, nanosecond time-resolved photoluminescence (NTRPL), and photo-induced absorption (PIA) of TPA/ZnO/ITO/glass. These were carried out in order to explore the Urbach energy of TPA films and the exciton dissociation at the interface between TPA and ZnO. The results show that the thickness of the ZnO thin film significantly influences the photovoltaic performance in terms of open-circuit voltage (VOC), fill factor (FF), and short-circuit current density (JSC). In the case of the thicker ZnO film, the photovoltaics have the better FF and Voc, as a result of the smaller electron recombination. This means that a thicker ZnO film can block the electron recombination from the Fermi level of the ITO to the valance band of the TPA. On the other hand, the thicker ZnO film results in a higher JSC due to the better exciton dissociation at the interface between TPA and ZnO, which means that the electron mobility of the thicker ZnO is higher. Consequently, the photovoltaic performance can be expected to be improved by using a transparent cathode electrode with high conductivity and electron mobility.

Original languageEnglish
Pages (from-to)117-122
Number of pages6
JournalSolar Energy
Volume120
DOIs
StatePublished - 01 10 2015
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2015 Elsevier Ltd.

Keywords

  • Energy transfer
  • Photo-induced absorption
  • Photovoltaic
  • Time-resolved photoluminescence

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