Thin silicon light-addressable potentiometric sensor by Deep reactive-ion etching

Wei Yin Zeng; Tsung Cheng Chen; Hui Ling Liu; Yu Ping Chen; Chia Ming Yang

doi:10.1109/TRANSDUCERS.2017.7994353

Thin silicon light-addressable potentiometric sensor by Deep reactive-ion etching

Wei Yin Zeng
, Tsung Cheng Chen
, Hui Ling Liu
, Yu Ping Chen
, Chia Ming Yang^*

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Chang Gung University
Chang Gung Memorial Hospital

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

To have a high photocurrent and spatial resolution of 2-dimensional (2D) chemical image in light-addressable potentiometric sensor (LAPS), silicon substrate is thinned down to about 100 μm by Deep reactive-ion etching (DRIE). Compare to commercial Si substrate with thickness of 350 μm, photocurrent is increased for 4.5 times and operation frequency is increased to 20 kHz. pH sensitivity is 67.09 mV/pH for NbOx sensing membrane. A clear 2D image to recognize a pattern with width of 100 μm can be obtained. Higher signal to noise ratio is benefit for high-speed and spatial resolution of 2D chemical image.

Original language	English
Title of host publication	TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1540-1542
Number of pages	3
ISBN (Electronic)	9781538627310
DOIs	https://doi.org/10.1109/TRANSDUCERS.2017.7994353
State	Published - 26 07 2017
Event	19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017 - Kaohsiung, Taiwan Duration: 18 06 2017 → 22 06 2017

Publication series

Name	TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems

Conference

Conference	19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017
Country/Territory	Taiwan
City	Kaohsiung
Period	18/06/17 → 22/06/17

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

Keywords

2D
Chemical image
DRIE
LAPS
Si

Access to Document

10.1109/TRANSDUCERS.2017.7994353

Cite this

Zeng, W. Y., Chen, T. C., Liu, H. L., Chen, Y. P., & Yang, C. M. (2017). Thin silicon light-addressable potentiometric sensor by Deep reactive-ion etching. In TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems (pp. 1540-1542). Article 7994353 (TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TRANSDUCERS.2017.7994353

Zeng, Wei Yin ; Chen, Tsung Cheng ; Liu, Hui Ling et al. / Thin silicon light-addressable potentiometric sensor by Deep reactive-ion etching. TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1540-1542 (TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems).

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title = "Thin silicon light-addressable potentiometric sensor by Deep reactive-ion etching",

abstract = "To have a high photocurrent and spatial resolution of 2-dimensional (2D) chemical image in light-addressable potentiometric sensor (LAPS), silicon substrate is thinned down to about 100 μm by Deep reactive-ion etching (DRIE). Compare to commercial Si substrate with thickness of 350 μm, photocurrent is increased for 4.5 times and operation frequency is increased to 20 kHz. pH sensitivity is 67.09 mV/pH for NbOx sensing membrane. A clear 2D image to recognize a pattern with width of 100 μm can be obtained. Higher signal to noise ratio is benefit for high-speed and spatial resolution of 2D chemical image.",

keywords = "2D, Chemical image, DRIE, LAPS, Si",

author = "Zeng, \{Wei Yin\} and Chen, \{Tsung Cheng\} and Liu, \{Hui Ling\} and Chen, \{Yu Ping\} and Yang, \{Chia Ming\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017 ; Conference date: 18-06-2017 Through 22-06-2017",

year = "2017",

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day = "26",

doi = "10.1109/TRANSDUCERS.2017.7994353",

language = "英语",

series = "TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems",

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Zeng, WY, Chen, TC, Liu, HL, Chen, YP & Yang, CM 2017, Thin silicon light-addressable potentiometric sensor by Deep reactive-ion etching. in TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems., 7994353, TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems, Institute of Electrical and Electronics Engineers Inc., pp. 1540-1542, 19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017, Kaohsiung, Taiwan, 18/06/17. https://doi.org/10.1109/TRANSDUCERS.2017.7994353

Thin silicon light-addressable potentiometric sensor by Deep reactive-ion etching. / Zeng, Wei Yin; Chen, Tsung Cheng; Liu, Hui Ling et al.
TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1540-1542 7994353 (TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Zeng, Wei Yin

AU - Chen, Tsung Cheng

AU - Liu, Hui Ling

AU - Chen, Yu Ping

AU - Yang, Chia Ming

PY - 2017/7/26

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N2 - To have a high photocurrent and spatial resolution of 2-dimensional (2D) chemical image in light-addressable potentiometric sensor (LAPS), silicon substrate is thinned down to about 100 μm by Deep reactive-ion etching (DRIE). Compare to commercial Si substrate with thickness of 350 μm, photocurrent is increased for 4.5 times and operation frequency is increased to 20 kHz. pH sensitivity is 67.09 mV/pH for NbOx sensing membrane. A clear 2D image to recognize a pattern with width of 100 μm can be obtained. Higher signal to noise ratio is benefit for high-speed and spatial resolution of 2D chemical image.

AB - To have a high photocurrent and spatial resolution of 2-dimensional (2D) chemical image in light-addressable potentiometric sensor (LAPS), silicon substrate is thinned down to about 100 μm by Deep reactive-ion etching (DRIE). Compare to commercial Si substrate with thickness of 350 μm, photocurrent is increased for 4.5 times and operation frequency is increased to 20 kHz. pH sensitivity is 67.09 mV/pH for NbOx sensing membrane. A clear 2D image to recognize a pattern with width of 100 μm can be obtained. Higher signal to noise ratio is benefit for high-speed and spatial resolution of 2D chemical image.

KW - 2D

KW - Chemical image

KW - DRIE

KW - LAPS

KW - Si

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Zeng WY, Chen TC, Liu HL, Chen YP, Yang CM. Thin silicon light-addressable potentiometric sensor by Deep reactive-ion etching. In TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1540-1542. 7994353. (TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems). doi: 10.1109/TRANSDUCERS.2017.7994353

Thin silicon light-addressable potentiometric sensor by Deep reactive-ion etching

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Publication series

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Bibliographical note

Keywords

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