Tin sulfide thin films prepared by thermal evaporation and sulfurization

Ming Jer Jeng; Hao Chun Yang; Liann Be Chang

doi:10.1109/PVSC.2014.6924937

Tin sulfide thin films prepared by thermal evaporation and sulfurization

Ming Jer Jeng, Hao Chun Yang, Liann Be Chang

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

Tin sulfide thin films are prepared by a two-step process, thermally evaporated Tin and sulfurization. Five sulfurization temperatures are used to investigate the characteristics of SnS thin films. It is observed that Tin and Sulfur in the formation films decrease and increase with the increasing sulfurization temperature, respectively. Two main diffraction peaks appear at 2θ=32.04° and 66.8°, which are assign to SnS phase. A very weak peak of SnS₂ is observed at 2θ=62.96°. Raman spectra show a strong peak of SnS at 218 cm^-1 and a weak peak of SnS₂ at 315cm^-1. From transmittance measurement, two and three absorption transitions are observed at lower and higher sulfurization temperatures, respectively. Their corresponding bandgaps of these absorption edges are 1.27, 1.41 and 3,9 eV, respectively, which are determined by a linear fitting absorption curve.

Original language	English
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	379-381
Number of pages	3
ISBN (Electronic)	9781479943982
DOIs	https://doi.org/10.1109/PVSC.2014.6924937
State	Published - 15 10 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 08 06 2014 → 13 06 2014

Publication series

Name	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Conference

Conference	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	08/06/14 → 13/06/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

Keywords

SnS
SnS
Tin sulfide
sulfurization
thermal evaporation
two-step process

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10.1109/PVSC.2014.6924937

Cite this

Jeng, M. J., Yang, H. C., & Chang, L. B. (2014). Tin sulfide thin films prepared by thermal evaporation and sulfurization. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 379-381). Article 6924937 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6924937

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title = "Tin sulfide thin films prepared by thermal evaporation and sulfurization",

abstract = "Tin sulfide thin films are prepared by a two-step process, thermally evaporated Tin and sulfurization. Five sulfurization temperatures are used to investigate the characteristics of SnS thin films. It is observed that Tin and Sulfur in the formation films decrease and increase with the increasing sulfurization temperature, respectively. Two main diffraction peaks appear at 2θ=32.04° and 66.8°, which are assign to SnS phase. A very weak peak of SnS2 is observed at 2θ=62.96°. Raman spectra show a strong peak of SnS at 218 cm-1 and a weak peak of SnS2 at 315cm-1. From transmittance measurement, two and three absorption transitions are observed at lower and higher sulfurization temperatures, respectively. Their corresponding bandgaps of these absorption edges are 1.27, 1.41 and 3,9 eV, respectively, which are determined by a linear fitting absorption curve.",

keywords = "SnS, SnS, Tin sulfide, sulfurization, thermal evaporation, two-step process",

author = "Jeng, {Ming Jer} and Yang, {Hao Chun} and Chang, {Liann Be}",

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doi = "10.1109/PVSC.2014.6924937",

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series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",

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Jeng, MJ, Yang, HC & Chang, LB 2014, Tin sulfide thin films prepared by thermal evaporation and sulfurization. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6924937, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 379-381, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 08/06/14. https://doi.org/10.1109/PVSC.2014.6924937

Tin sulfide thin films prepared by thermal evaporation and sulfurization. / Jeng, Ming Jer; Yang, Hao Chun; Chang, Liann Be.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 379-381 6924937 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Jeng, Ming Jer

AU - Yang, Hao Chun

AU - Chang, Liann Be

PY - 2014/10/15

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N2 - Tin sulfide thin films are prepared by a two-step process, thermally evaporated Tin and sulfurization. Five sulfurization temperatures are used to investigate the characteristics of SnS thin films. It is observed that Tin and Sulfur in the formation films decrease and increase with the increasing sulfurization temperature, respectively. Two main diffraction peaks appear at 2θ=32.04° and 66.8°, which are assign to SnS phase. A very weak peak of SnS2 is observed at 2θ=62.96°. Raman spectra show a strong peak of SnS at 218 cm-1 and a weak peak of SnS2 at 315cm-1. From transmittance measurement, two and three absorption transitions are observed at lower and higher sulfurization temperatures, respectively. Their corresponding bandgaps of these absorption edges are 1.27, 1.41 and 3,9 eV, respectively, which are determined by a linear fitting absorption curve.

AB - Tin sulfide thin films are prepared by a two-step process, thermally evaporated Tin and sulfurization. Five sulfurization temperatures are used to investigate the characteristics of SnS thin films. It is observed that Tin and Sulfur in the formation films decrease and increase with the increasing sulfurization temperature, respectively. Two main diffraction peaks appear at 2θ=32.04° and 66.8°, which are assign to SnS phase. A very weak peak of SnS2 is observed at 2θ=62.96°. Raman spectra show a strong peak of SnS at 218 cm-1 and a weak peak of SnS2 at 315cm-1. From transmittance measurement, two and three absorption transitions are observed at lower and higher sulfurization temperatures, respectively. Their corresponding bandgaps of these absorption edges are 1.27, 1.41 and 3,9 eV, respectively, which are determined by a linear fitting absorption curve.

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ER -

Tin sulfide thin films prepared by thermal evaporation and sulfurization

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