Top gate graphene field effect transistor on flexible substrate by using one-step fluorinated graphene as dielectrics

Mamina Sahoo; Fei-Hou; Zhiwei Liu; Chao Sung Lai

doi:10.1109/IPFA.2017.8060195

Top gate graphene field effect transistor on flexible substrate by using one-step fluorinated graphene as dielectrics

Mamina Sahoo, Fei-Hou, Zhiwei Liu, Chao Sung Lai

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this study, we perform a top gate field effect transistor by using the integration of novel materials such as graphene as active channel and fluorinated graphene as dielectrics on flexible Polyethylene terephthalate (PET) substrate. These device shows high carrier mobility (∼969 cm²/v.s) at a drain bias of +0.5V. It shows good mechanical flexibility and electrical stability after bending measurement under modest strain upto 15% with different bending cycles. This result reveals the benefits of using 2D material that is graphene and fluorinated graphene for flexible electronics devices.

Original language	English
Title of host publication	24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781538617793
DOIs	https://doi.org/10.1109/IPFA.2017.8060195
State	Published - 05 10 2017
Event	24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 - Chengdu, China Duration: 04 07 2017 → 07 07 2017

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2017-July

Conference

Conference	24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
Country/Territory	China
City	Chengdu
Period	04/07/17 → 07/07/17

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

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10.1109/IPFA.2017.8060195

Cite this

Sahoo, M., Fei-Hou, Liu, Z., & Lai, C. S. (2017). Top gate graphene field effect transistor on flexible substrate by using one-step fluorinated graphene as dielectrics. In 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 (pp. 1-4). (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2017-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2017.8060195

Sahoo, Mamina ; Fei-Hou ; Liu, Zhiwei et al. / Top gate graphene field effect transistor on flexible substrate by using one-step fluorinated graphene as dielectrics. 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1-4 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

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title = "Top gate graphene field effect transistor on flexible substrate by using one-step fluorinated graphene as dielectrics",

abstract = "In this study, we perform a top gate field effect transistor by using the integration of novel materials such as graphene as active channel and fluorinated graphene as dielectrics on flexible Polyethylene terephthalate (PET) substrate. These device shows high carrier mobility (∼969 cm2/v.s) at a drain bias of +0.5V. It shows good mechanical flexibility and electrical stability after bending measurement under modest strain upto 15% with different bending cycles. This result reveals the benefits of using 2D material that is graphene and fluorinated graphene for flexible electronics devices.",

author = "Mamina Sahoo and Fei-Hou and Zhiwei Liu and Lai, {Chao Sung}",

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Sahoo, M, Fei-Hou, Liu, Z & Lai, CS 2017, Top gate graphene field effect transistor on flexible substrate by using one-step fluorinated graphene as dielectrics. in 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2017-July, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017, Chengdu, China, 04/07/17. https://doi.org/10.1109/IPFA.2017.8060195

Top gate graphene field effect transistor on flexible substrate by using one-step fluorinated graphene as dielectrics. / Sahoo, Mamina; Fei-Hou; Liu, Zhiwei et al.
24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-4 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2017-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - In this study, we perform a top gate field effect transistor by using the integration of novel materials such as graphene as active channel and fluorinated graphene as dielectrics on flexible Polyethylene terephthalate (PET) substrate. These device shows high carrier mobility (∼969 cm2/v.s) at a drain bias of +0.5V. It shows good mechanical flexibility and electrical stability after bending measurement under modest strain upto 15% with different bending cycles. This result reveals the benefits of using 2D material that is graphene and fluorinated graphene for flexible electronics devices.

AB - In this study, we perform a top gate field effect transistor by using the integration of novel materials such as graphene as active channel and fluorinated graphene as dielectrics on flexible Polyethylene terephthalate (PET) substrate. These device shows high carrier mobility (∼969 cm2/v.s) at a drain bias of +0.5V. It shows good mechanical flexibility and electrical stability after bending measurement under modest strain upto 15% with different bending cycles. This result reveals the benefits of using 2D material that is graphene and fluorinated graphene for flexible electronics devices.

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Sahoo M, Fei-Hou, Liu Z, Lai CS. Top gate graphene field effect transistor on flexible substrate by using one-step fluorinated graphene as dielectrics. In 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-4. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2017.8060195

Top gate graphene field effect transistor on flexible substrate by using one-step fluorinated graphene as dielectrics

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