Transient behavior of phosphorus dose loss and modeling of dopant segregation at the Si/SiO2 interface

J. R. Tsai; L. W. Ho; S. H. Lin; T. C. Chang; M. D. Shieh; H. C. Lin; J. P. Lin; W. S. Feng; R. D. Chang

Transient behavior of phosphorus dose loss and modeling of dopant segregation at the Si/SiO₂ interface

J. R. Tsai^*, L. W. Ho, S. H. Lin, T. C. Chang, M. D. Shieh, H. C. Lin, J. P. Lin, W. S. Feng, R. D. Chang

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Experiments of phosphorus dose loss were performed to investigate fundamental kinetics of dopant segregation at the Si/SiO₂ interface. A new interface cluster model was proposed in addition to the conventional interface trap model. Simulations successfully fit the transient behavior of phosphorus dose loss over a wide temperature range. Segregation energies were extracted from detrapping/trapping ratios at different temperatures.

Original language	English
Pages (from-to)	979-982
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
State	Published - 2004
Event	IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: 13 12 2004 → 15 12 2004

Cite this

@article{425be78545684a85b9e3ac5263215222,

title = "Transient behavior of phosphorus dose loss and modeling of dopant segregation at the Si/SiO2 interface",

abstract = "Experiments of phosphorus dose loss were performed to investigate fundamental kinetics of dopant segregation at the Si/SiO2 interface. A new interface cluster model was proposed in addition to the conventional interface trap model. Simulations successfully fit the transient behavior of phosphorus dose loss over a wide temperature range. Segregation energies were extracted from detrapping/trapping ratios at different temperatures.",

author = "Tsai, {J. R.} and Ho, {L. W.} and Lin, {S. H.} and Chang, {T. C.} and Shieh, {M. D.} and Lin, {H. C.} and Lin, {J. P.} and Feng, {W. S.} and Chang, {R. D.}",

year = "2004",

language = "英语",

pages = "979--982",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting, 2004 IEDM ; Conference date: 13-12-2004 Through 15-12-2004",

}

TY - JOUR

T1 - Transient behavior of phosphorus dose loss and modeling of dopant segregation at the Si/SiO2 interface

AU - Tsai, J. R.

AU - Ho, L. W.

AU - Lin, S. H.

AU - Chang, T. C.

AU - Shieh, M. D.

AU - Lin, H. C.

AU - Lin, J. P.

AU - Feng, W. S.

AU - Chang, R. D.

PY - 2004

Y1 - 2004

N2 - Experiments of phosphorus dose loss were performed to investigate fundamental kinetics of dopant segregation at the Si/SiO2 interface. A new interface cluster model was proposed in addition to the conventional interface trap model. Simulations successfully fit the transient behavior of phosphorus dose loss over a wide temperature range. Segregation energies were extracted from detrapping/trapping ratios at different temperatures.

AB - Experiments of phosphorus dose loss were performed to investigate fundamental kinetics of dopant segregation at the Si/SiO2 interface. A new interface cluster model was proposed in addition to the conventional interface trap model. Simulations successfully fit the transient behavior of phosphorus dose loss over a wide temperature range. Segregation energies were extracted from detrapping/trapping ratios at different temperatures.

UR - http://www.scopus.com/inward/record.url?scp=21644463895&partnerID=8YFLogxK

M3 - 会议文章

AN - SCOPUS:21644463895

SN - 0163-1918

SP - 979

EP - 982

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - IEEE International Electron Devices Meeting, 2004 IEDM

Y2 - 13 December 2004 through 15 December 2004

ER -

Transient behavior of phosphorus dose loss and modeling of dopant segregation at the Si/SiO₂ interface

Abstract

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