Transient dose loss of phosphorus during postimplantation annealing at 800°C

Jung Ruey Tsai*, Li Wei Ho, Ruey Dar Chang

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

1 Scopus citations

Abstract

The transient dose loss of phosphorus implanted in silicon was investigated at 800°C at doses of 7 × 1013 and 2 × 10 14 cm-2 at 50keV. The percentage decrease in phosphorus dose and the degree of transient enhanced diffusion increase with implanted dose during the annealing after phosphorus implantation. Additional implantation of Si+ and annealing at 800°C were performed to approach the limit of the dose loss. The maximum percentage dose loss decreases as the dose of implanted phosphorus increases because of segregation kinetics at the Si/SiO2 interface. The effect of arsenic background doping on phosphorus dose loss was also investigated. Phosphorus segregates rapidly at the interface because arsenic doping enhances diffusion. However, arsenic background doping reduces the maximum percentage dose loss of phosphorus.

Original languageEnglish
Pages (from-to)4035-4037
Number of pages3
JournalJapanese Journal of Applied Physics
Volume46
Issue number7 A
DOIs
StatePublished - 04 07 2007

Keywords

  • Dose loss
  • Interface segregation
  • Phosphorus
  • Transient enhanced diffusion

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