Abstract
The transient dose loss of phosphorus implanted in silicon was investigated at 800°C at doses of 7 × 1013 and 2 × 10 14 cm-2 at 50keV. The percentage decrease in phosphorus dose and the degree of transient enhanced diffusion increase with implanted dose during the annealing after phosphorus implantation. Additional implantation of Si+ and annealing at 800°C were performed to approach the limit of the dose loss. The maximum percentage dose loss decreases as the dose of implanted phosphorus increases because of segregation kinetics at the Si/SiO2 interface. The effect of arsenic background doping on phosphorus dose loss was also investigated. Phosphorus segregates rapidly at the interface because arsenic doping enhances diffusion. However, arsenic background doping reduces the maximum percentage dose loss of phosphorus.
Original language | English |
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Pages (from-to) | 4035-4037 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics |
Volume | 46 |
Issue number | 7 A |
DOIs | |
State | Published - 04 07 2007 |
Keywords
- Dose loss
- Interface segregation
- Phosphorus
- Transient enhanced diffusion