Transparent resistive random access memory (TRRAM) based on Gd 2O3 film and its resistive switching characteristics

Kou Chen Liu; Wen Hsien Tzeng; Kow Ming Chang; Yi Chun Chan; Chun Chih Kuo; Chun Wen Cheng

doi:10.1109/INEC.2010.5425137

Transparent resistive random access memory (TRRAM) based on Gd ₂O₃ film and its resistive switching characteristics

Kou Chen Liu^*, Wen Hsien Tzeng, Kow Ming Chang, Yi Chun Chan, Chun Chih Kuo, Chun Wen Cheng

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

A transparent resistive random access memory (T-RRAM) based on ITO/Gd ₂O₃/ITO capacitor structure is successfully fabricated on Glass substrate by pulse laser deposition (PLD) at room temperature. Under bipolar operation, the ITO/Gd₂O₃/ITO device exhibits reliable and stable resistive switching behaviors for more than 200 switching cycles and low operation voltage of -2V/+2V. Furthermore, our device demonstrates nonpolar resistive switching characteristic which exhibits high potential to be applied for the next generation nonvolatile memory.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	898-899
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5425137
State	Published - 2010
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 03 01 2010 → 08 01 2010

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Conference

Conference	2010 3rd International Nanoelectronics Conference, INEC 2010
Country/Territory	China
City	Hongkong
Period	03/01/10 → 08/01/10

Access to Document

10.1109/INEC.2010.5425137

Cite this

Liu, K. C., Tzeng, W. H., Chang, K. M., Chan, Y. C., Kuo, C. C., & Cheng, C. W. (2010). Transparent resistive random access memory (TRRAM) based on Gd ₂O₃ film and its resistive switching characteristics. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 898-899). Article 5425137 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5425137

@inproceedings{9f13399a4c0d4595a5e60b0e385e1ec3,

title = "Transparent resistive random access memory (TRRAM) based on Gd 2O3 film and its resistive switching characteristics",

abstract = "A transparent resistive random access memory (T-RRAM) based on ITO/Gd 2O3/ITO capacitor structure is successfully fabricated on Glass substrate by pulse laser deposition (PLD) at room temperature. Under bipolar operation, the ITO/Gd2O3/ITO device exhibits reliable and stable resistive switching behaviors for more than 200 switching cycles and low operation voltage of -2V/+2V. Furthermore, our device demonstrates nonpolar resistive switching characteristic which exhibits high potential to be applied for the next generation nonvolatile memory.",

author = "Liu, {Kou Chen} and Tzeng, {Wen Hsien} and Chang, {Kow Ming} and Chan, {Yi Chun} and Kuo, {Chun Chih} and Cheng, {Chun Wen}",

year = "2010",

doi = "10.1109/INEC.2010.5425137",

language = "英语",

isbn = "9781424435449",

series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

pages = "898--899",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

}

Liu, KC, Tzeng, WH, Chang, KM, Chan, YC, Kuo, CC & Cheng, CW 2010, Transparent resistive random access memory (TRRAM) based on Gd ₂O₃ film and its resistive switching characteristics. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5425137, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 898-899, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 03/01/10. https://doi.org/10.1109/INEC.2010.5425137

Transparent resistive random access memory (TRRAM) based on Gd ₂O₃ film and its resistive switching characteristics. / Liu, Kou Chen; Tzeng, Wen Hsien; Chang, Kow Ming et al.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 898-899 5425137 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Liu, Kou Chen

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AU - Chang, Kow Ming

AU - Chan, Yi Chun

AU - Kuo, Chun Chih

AU - Cheng, Chun Wen

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N2 - A transparent resistive random access memory (T-RRAM) based on ITO/Gd 2O3/ITO capacitor structure is successfully fabricated on Glass substrate by pulse laser deposition (PLD) at room temperature. Under bipolar operation, the ITO/Gd2O3/ITO device exhibits reliable and stable resistive switching behaviors for more than 200 switching cycles and low operation voltage of -2V/+2V. Furthermore, our device demonstrates nonpolar resistive switching characteristic which exhibits high potential to be applied for the next generation nonvolatile memory.

AB - A transparent resistive random access memory (T-RRAM) based on ITO/Gd 2O3/ITO capacitor structure is successfully fabricated on Glass substrate by pulse laser deposition (PLD) at room temperature. Under bipolar operation, the ITO/Gd2O3/ITO device exhibits reliable and stable resistive switching behaviors for more than 200 switching cycles and low operation voltage of -2V/+2V. Furthermore, our device demonstrates nonpolar resistive switching characteristic which exhibits high potential to be applied for the next generation nonvolatile memory.

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Liu KC, Tzeng WH, Chang KM, Chan YC, Kuo CC, Cheng CW. Transparent resistive random access memory (TRRAM) based on Gd ₂O₃ film and its resistive switching characteristics. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 898-899. 5425137. (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). doi: 10.1109/INEC.2010.5425137