Transport measurements on MOVPE-grown InN films

Shang Chia Chen; Shih Kai Lin; Kun Ta Wu; Chao Ping Huang; Pen Hsiu Chang; N. C. Chen; Chin An Chang; Hsian Chu Peng; Chuang Feng Shih; Kuo Shung Liu; Hong Syuan Wang; Pu Tai Yang; C. T. Liang; Y. H. Chang; Y. F. Chen

doi:10.1016/j.mejo.2005.02.038

Transport measurements on MOVPE-grown InN films

Shang Chia Chen, Shih Kai Lin, Kun Ta Wu, Chao Ping Huang^*, Pen Hsiu Chang, N. C. Chen, Chin An Chang, Hsian Chu Peng, Chuang Feng Shih, Kuo Shung Liu, Hong Syuan Wang, Pu Tai Yang, C. T. Liang, Y. H. Chang, Y. F. Chen

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We have performed electrical transport measurements on InN films. Our results show that the electron transport in our InN films is metallic-like, that is, within the experimental error the carrier density is temperature- independent over a wide temperature range (4 K≤T≤290 K). At low temperatures, the resistivities of our InN devices appear to saturate and show gradual increase with increasing temperatures. We suggest that residue impurity scattering limits the electron mobility in InN films. We compare our results with existing theoretical models.

Original language	English
Pages (from-to)	428-430
Number of pages	3
Journal	Microelectronics Journal
Volume	36
Issue number	3-6
DOIs	https://doi.org/10.1016/j.mejo.2005.02.038
State	Published - 03 2005

Keywords

InN films
Transport measurements

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10.1016/j.mejo.2005.02.038

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@article{d749ae45532240f487366736d3c18dbd,

title = "Transport measurements on MOVPE-grown InN films",

abstract = "We have performed electrical transport measurements on InN films. Our results show that the electron transport in our InN films is metallic-like, that is, within the experimental error the carrier density is temperature- independent over a wide temperature range (4 K≤T≤290 K). At low temperatures, the resistivities of our InN devices appear to saturate and show gradual increase with increasing temperatures. We suggest that residue impurity scattering limits the electron mobility in InN films. We compare our results with existing theoretical models.",

keywords = "InN films, Transport measurements",

author = "Chen, {Shang Chia} and Lin, {Shih Kai} and Wu, {Kun Ta} and Huang, {Chao Ping} and Chang, {Pen Hsiu} and Chen, {N. C.} and Chang, {Chin An} and Peng, {Hsian Chu} and Shih, {Chuang Feng} and Liu, {Kuo Shung} and Wang, {Hong Syuan} and Yang, {Pu Tai} and Liang, {C. T.} and Chang, {Y. H.} and Chen, {Y. F.}",

year = "2005",

month = mar,

doi = "10.1016/j.mejo.2005.02.038",

language = "英语",

volume = "36",

pages = "428--430",

journal = "Microelectronics Journal",

issn = "0026-2692",

publisher = "Elsevier Ltd",

number = "3-6",

}

TY - JOUR

T1 - Transport measurements on MOVPE-grown InN films

AU - Chen, Shang Chia

AU - Lin, Shih Kai

AU - Wu, Kun Ta

AU - Huang, Chao Ping

AU - Chang, Pen Hsiu

AU - Chen, N. C.

AU - Chang, Chin An

AU - Peng, Hsian Chu

AU - Shih, Chuang Feng

AU - Liu, Kuo Shung

AU - Wang, Hong Syuan

AU - Yang, Pu Tai

AU - Liang, C. T.

AU - Chang, Y. H.

AU - Chen, Y. F.

PY - 2005/3

Y1 - 2005/3

N2 - We have performed electrical transport measurements on InN films. Our results show that the electron transport in our InN films is metallic-like, that is, within the experimental error the carrier density is temperature- independent over a wide temperature range (4 K≤T≤290 K). At low temperatures, the resistivities of our InN devices appear to saturate and show gradual increase with increasing temperatures. We suggest that residue impurity scattering limits the electron mobility in InN films. We compare our results with existing theoretical models.

AB - We have performed electrical transport measurements on InN films. Our results show that the electron transport in our InN films is metallic-like, that is, within the experimental error the carrier density is temperature- independent over a wide temperature range (4 K≤T≤290 K). At low temperatures, the resistivities of our InN devices appear to saturate and show gradual increase with increasing temperatures. We suggest that residue impurity scattering limits the electron mobility in InN films. We compare our results with existing theoretical models.

KW - InN films

KW - Transport measurements

UR - http://www.scopus.com/inward/record.url?scp=33644505477&partnerID=8YFLogxK

U2 - 10.1016/j.mejo.2005.02.038

DO - 10.1016/j.mejo.2005.02.038

M3 - 会议文章

AN - SCOPUS:33644505477

SN - 0026-2692

VL - 36

SP - 428

EP - 430

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 3-6

ER -

Transport measurements on MOVPE-grown InN films

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