Turnaround of hysterisis for capacitance-voltage characteristics of hafnium oxynitride dielectrics

J. C. Wang, D. C. Shie, T. F. Lei, C. L. Lee*

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

7 Scopus citations

Abstract

For different sweep voltage, the capacitance-voltage (C-V) characteristics of hafnium oxynitride gate dielectrics for silicon metal-oxide-semiconductor (MOS) capacitors was investigated. It was observed that the turnaround phenomenon is due to the electron trapping at the low voltage and hole trapping at the high voltage in the gate dielectrics. The electron trappings at low electric field and hole trapping explains the phenomenon which resulted from the impact ionization at high electric field in the dielectrics. The results show that the C-V hysteresis has a turnaround characteristic as the applied voltage exceeds -3.0 V for p-type substrate MOS capacitor.

Original languageEnglish
Pages (from-to)1531-1533
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number9
DOIs
StatePublished - 01 03 2004
Externally publishedYes

Fingerprint

Dive into the research topics of 'Turnaround of hysterisis for capacitance-voltage characteristics of hafnium oxynitride dielectrics'. Together they form a unique fingerprint.

Cite this