Abstract
For different sweep voltage, the capacitance-voltage (C-V) characteristics of hafnium oxynitride gate dielectrics for silicon metal-oxide-semiconductor (MOS) capacitors was investigated. It was observed that the turnaround phenomenon is due to the electron trapping at the low voltage and hole trapping at the high voltage in the gate dielectrics. The electron trappings at low electric field and hole trapping explains the phenomenon which resulted from the impact ionization at high electric field in the dielectrics. The results show that the C-V hysteresis has a turnaround characteristic as the applied voltage exceeds -3.0 V for p-type substrate MOS capacitor.
| Original language | English |
|---|---|
| Pages (from-to) | 1531-1533 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 84 |
| Issue number | 9 |
| DOIs | |
| State | Published - 01 03 2004 |
| Externally published | Yes |