Ultra-high temperature and ultra-high speed operation of 1.3 μm AlGaInAs/InP uncooled laser diodes

M. C. Wang*, W. Lin, T. T. Shi, H. H. Liao, H. L. Chang, J. Y. Su, Y. K. Tu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations


Demonstrated are AlxGayIn1-x-yAs/InP strain-compensated multi-quantum-well self-aligned ridge lasers with excellent high-temperature and high-speed characteristics. To characterize their performance, noise spectra are measured to determine the relaxation resonance frequency. A maximum resonance frequency over 15.6 GHz is observed for facet output power of 14 mW, at a bias current of 66 mA. The estimated intrinsic 3dB modulation bandwidth at 25°C has exceeded 23 GHz. Moreover, a maximum resonance frequency over 10 GHz is measured at 85°C with a bias current of 56 mA above threshold. Intrinsic 3dB modulation bandwidth estimated above 15 GHz at 85°C is achieved. The differential gain at room temperature is as high as 14 × 10-12m3s-1, and drops to 7.5 × 10-12m3s-1 at 85°C. These values are deemed representative of record values reported for 1.3 μm AlGaInAs laser devices.

Original languageEnglish
Pages (from-to)280-281
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
StatePublished - 1995
Externally publishedYes
EventProceedings of the 1995 8th Annual Meeting of the IEEE Lasers and Electro-Optics Society. Part 1 (of 2) - San Francisco, CA, USA
Duration: 30 10 199502 11 1995


Dive into the research topics of 'Ultra-high temperature and ultra-high speed operation of 1.3 μm AlGaInAs/InP uncooled laser diodes'. Together they form a unique fingerprint.

Cite this