Ultra-high temperature and ultra-high speed operation of 1.3 μm AlGaInAs/InP uncooled laser diodes

M. C. Wang; W. Lin; T. T. Shi; H. H. Liao; H. L. Chang; J. Y. Su; Y. K. Tu

Ultra-high temperature and ultra-high speed operation of 1.3 μm AlGaInAs/InP uncooled laser diodes

M. C. Wang^*, W. Lin, T. T. Shi, H. H. Liao, H. L. Chang, J. Y. Su, Y. K. Tu

^*Corresponding author for this work

Ministry of Transportation and Communications, Taiwan

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Demonstrated are Al_xGa_yIn_1-x-yAs/InP strain-compensated multi-quantum-well self-aligned ridge lasers with excellent high-temperature and high-speed characteristics. To characterize their performance, noise spectra are measured to determine the relaxation resonance frequency. A maximum resonance frequency over 15.6 GHz is observed for facet output power of 14 mW, at a bias current of 66 mA. The estimated intrinsic 3dB modulation bandwidth at 25°C has exceeded 23 GHz. Moreover, a maximum resonance frequency over 10 GHz is measured at 85°C with a bias current of 56 mA above threshold. Intrinsic 3dB modulation bandwidth estimated above 15 GHz at 85°C is achieved. The differential gain at room temperature is as high as 14 × 10^-12m³s^-1, and drops to 7.5 × 10^-12m³s^-1 at 85°C. These values are deemed representative of record values reported for 1.3 μm AlGaInAs laser devices.

Original language	English
Pages (from-to)	280-281
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	1
State	Published - 1995
Externally published	Yes
Event	Proceedings of the 1995 8th Annual Meeting of the IEEE Lasers and Electro-Optics Society. Part 1 (of 2) - San Francisco, CA, USA Duration: 30 10 1995 → 02 11 1995

Cite this

@article{4828731fdf6d4657b436933e106e7c89,

title = "Ultra-high temperature and ultra-high speed operation of 1.3 μm AlGaInAs/InP uncooled laser diodes",

abstract = "Demonstrated are AlxGayIn1-x-yAs/InP strain-compensated multi-quantum-well self-aligned ridge lasers with excellent high-temperature and high-speed characteristics. To characterize their performance, noise spectra are measured to determine the relaxation resonance frequency. A maximum resonance frequency over 15.6 GHz is observed for facet output power of 14 mW, at a bias current of 66 mA. The estimated intrinsic 3dB modulation bandwidth at 25°C has exceeded 23 GHz. Moreover, a maximum resonance frequency over 10 GHz is measured at 85°C with a bias current of 56 mA above threshold. Intrinsic 3dB modulation bandwidth estimated above 15 GHz at 85°C is achieved. The differential gain at room temperature is as high as 14 × 10-12m3s-1, and drops to 7.5 × 10-12m3s-1 at 85°C. These values are deemed representative of record values reported for 1.3 μm AlGaInAs laser devices.",

author = "Wang, {M. C.} and W. Lin and Shi, {T. T.} and Liao, {H. H.} and Chang, {H. L.} and Su, {J. Y.} and Tu, {Y. K.}",

year = "1995",

language = "英语",

volume = "1",

pages = "280--281",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1995 8th Annual Meeting of the IEEE Lasers and Electro-Optics Society. Part 1 (of 2) ; Conference date: 30-10-1995 Through 02-11-1995",

}

TY - JOUR

T1 - Ultra-high temperature and ultra-high speed operation of 1.3 μm AlGaInAs/InP uncooled laser diodes

AU - Wang, M. C.

AU - Lin, W.

AU - Shi, T. T.

AU - Liao, H. H.

AU - Chang, H. L.

AU - Su, J. Y.

AU - Tu, Y. K.

PY - 1995

Y1 - 1995

N2 - Demonstrated are AlxGayIn1-x-yAs/InP strain-compensated multi-quantum-well self-aligned ridge lasers with excellent high-temperature and high-speed characteristics. To characterize their performance, noise spectra are measured to determine the relaxation resonance frequency. A maximum resonance frequency over 15.6 GHz is observed for facet output power of 14 mW, at a bias current of 66 mA. The estimated intrinsic 3dB modulation bandwidth at 25°C has exceeded 23 GHz. Moreover, a maximum resonance frequency over 10 GHz is measured at 85°C with a bias current of 56 mA above threshold. Intrinsic 3dB modulation bandwidth estimated above 15 GHz at 85°C is achieved. The differential gain at room temperature is as high as 14 × 10-12m3s-1, and drops to 7.5 × 10-12m3s-1 at 85°C. These values are deemed representative of record values reported for 1.3 μm AlGaInAs laser devices.

AB - Demonstrated are AlxGayIn1-x-yAs/InP strain-compensated multi-quantum-well self-aligned ridge lasers with excellent high-temperature and high-speed characteristics. To characterize their performance, noise spectra are measured to determine the relaxation resonance frequency. A maximum resonance frequency over 15.6 GHz is observed for facet output power of 14 mW, at a bias current of 66 mA. The estimated intrinsic 3dB modulation bandwidth at 25°C has exceeded 23 GHz. Moreover, a maximum resonance frequency over 10 GHz is measured at 85°C with a bias current of 56 mA above threshold. Intrinsic 3dB modulation bandwidth estimated above 15 GHz at 85°C is achieved. The differential gain at room temperature is as high as 14 × 10-12m3s-1, and drops to 7.5 × 10-12m3s-1 at 85°C. These values are deemed representative of record values reported for 1.3 μm AlGaInAs laser devices.

UR - http://www.scopus.com/inward/record.url?scp=0029490072&partnerID=8YFLogxK

M3 - 会议文章

AN - SCOPUS:0029490072

SN - 1092-8081

VL - 1

SP - 280

EP - 281

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - Proceedings of the 1995 8th Annual Meeting of the IEEE Lasers and Electro-Optics Society. Part 1 (of 2)

Y2 - 30 October 1995 through 2 November 1995

ER -

Ultra-high temperature and ultra-high speed operation of 1.3 μm AlGaInAs/InP uncooled laser diodes

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