Ultra-low turn-on voltage (0.37 V) vertical GaN-on-GaN Schottky barrier diode via oxygen plasma treatment

Junye Wu; Zeliang Liao; Haofan Wang; Ping Zou; Renqiang Zhu; Weixiong Cai; Wenrong Zhuang; Yudi Tu; Shaojun Chen; Xinbo Xiong; Hsien Chin Chiu; Xiaohua Li; Xinke Liu

doi:10.1063/5.0171406

Ultra-low turn-on voltage (0.37 V) vertical GaN-on-GaN Schottky barrier diode via oxygen plasma treatment

Junye Wu, Zeliang Liao, Haofan Wang, Ping Zou, Renqiang Zhu, Weixiong Cai, Wenrong Zhuang, Yudi Tu, Shaojun Chen, Xinbo Xiong, Hsien Chin Chiu, Xiaohua Li, Xinke Liu^*

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

In this work, vertical gallium nitride (GaN) Schottky barrier diodes (SBDs) with an ultra-low turn-on voltage V_ON (0.37 V) were demonstrated. Due to the process of O₂ plasma treatment, GaON was formed on the surface of GaN and further modified the surface potential of the material surface, which made the V_ON decrease from 0.62 to 0.37 V. Spin-on-glass was deposited on top of devices to form the floating guard ring, which was used to improve the breakdown voltage to 681 V (at J = 1 A/cm²) by reducing the electric field distribution. The vertical GaN SBDs exhibit a specific on-resistance (R_ON) of 2.6 mΩ cm². Deterioration of the device under different stress time changes slightly showed great stability of the devices.

Original language	English
Article number	213505
Journal	Applied Physics Letters
Volume	123
Issue number	21
DOIs	https://doi.org/10.1063/5.0171406
State	Published - 20 11 2023

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@article{63e915d61907456cbe6c8065374a4349,

title = "Ultra-low turn-on voltage (0.37 V) vertical GaN-on-GaN Schottky barrier diode via oxygen plasma treatment",

abstract = "In this work, vertical gallium nitride (GaN) Schottky barrier diodes (SBDs) with an ultra-low turn-on voltage VON (0.37 V) were demonstrated. Due to the process of O2 plasma treatment, GaON was formed on the surface of GaN and further modified the surface potential of the material surface, which made the VON decrease from 0.62 to 0.37 V. Spin-on-glass was deposited on top of devices to form the floating guard ring, which was used to improve the breakdown voltage to 681 V (at J = 1 A/cm2) by reducing the electric field distribution. The vertical GaN SBDs exhibit a specific on-resistance (RON) of 2.6 mΩ cm2. Deterioration of the device under different stress time changes slightly showed great stability of the devices.",

author = "Junye Wu and Zeliang Liao and Haofan Wang and Ping Zou and Renqiang Zhu and Weixiong Cai and Wenrong Zhuang and Yudi Tu and Shaojun Chen and Xinbo Xiong and Chiu, {Hsien Chin} and Xiaohua Li and Xinke Liu",

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month = nov,

day = "20",

doi = "10.1063/5.0171406",

language = "英语",

volume = "123",

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publisher = "American Institute of Physics",

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T1 - Ultra-low turn-on voltage (0.37 V) vertical GaN-on-GaN Schottky barrier diode via oxygen plasma treatment

AU - Wu, Junye

AU - Liao, Zeliang

AU - Wang, Haofan

AU - Zou, Ping

AU - Zhu, Renqiang

AU - Cai, Weixiong

AU - Zhuang, Wenrong

AU - Tu, Yudi

AU - Chen, Shaojun

AU - Xiong, Xinbo

AU - Chiu, Hsien Chin

AU - Li, Xiaohua

AU - Liu, Xinke

PY - 2023/11/20

Y1 - 2023/11/20

N2 - In this work, vertical gallium nitride (GaN) Schottky barrier diodes (SBDs) with an ultra-low turn-on voltage VON (0.37 V) were demonstrated. Due to the process of O2 plasma treatment, GaON was formed on the surface of GaN and further modified the surface potential of the material surface, which made the VON decrease from 0.62 to 0.37 V. Spin-on-glass was deposited on top of devices to form the floating guard ring, which was used to improve the breakdown voltage to 681 V (at J = 1 A/cm2) by reducing the electric field distribution. The vertical GaN SBDs exhibit a specific on-resistance (RON) of 2.6 mΩ cm2. Deterioration of the device under different stress time changes slightly showed great stability of the devices.

AB - In this work, vertical gallium nitride (GaN) Schottky barrier diodes (SBDs) with an ultra-low turn-on voltage VON (0.37 V) were demonstrated. Due to the process of O2 plasma treatment, GaON was formed on the surface of GaN and further modified the surface potential of the material surface, which made the VON decrease from 0.62 to 0.37 V. Spin-on-glass was deposited on top of devices to form the floating guard ring, which was used to improve the breakdown voltage to 681 V (at J = 1 A/cm2) by reducing the electric field distribution. The vertical GaN SBDs exhibit a specific on-resistance (RON) of 2.6 mΩ cm2. Deterioration of the device under different stress time changes slightly showed great stability of the devices.

UR - http://www.scopus.com/inward/record.url?scp=85177857341&partnerID=8YFLogxK

U2 - 10.1063/5.0171406

DO - 10.1063/5.0171406

M3 - 文章

AN - SCOPUS:85177857341

SN - 0003-6951

VL - 123

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 213505

ER -

Ultra-low turn-on voltage (0.37 V) vertical GaN-on-GaN Schottky barrier diode via oxygen plasma treatment

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