Ultrahigh temperature and ultrahigh speed operation of 1.3 μm strain-compensated AlGaInAs/InP uncooled laser diodes

M. C. Wang, W. Lin, T. T. Shi, Y. K. Tu

Research output: Contribution to journalJournal Article peer-review

38 Scopus citations

Abstract

High performance 1.3μm uncooled lasers with excellent high temperature and high speed characteristics are reported. A CW characteristic temperature of 105K between 25 and 85°C, a maximum CW operating temperature above 170°C, and an intrinsic 3dB modulation bandwidths estimateʶd at ≥ 23 GHz at 25 °C and 15GHz at 85 °C, have been achieved. These values are among the best obtained for 1.3μm AlGaInAs laser devices.

Original languageEnglish
Pages (from-to)1584-1585
Number of pages2
JournalElectronics Letters
Volume31
Issue number18
DOIs
StatePublished - 31 08 1995
Externally publishedYes

Keywords

  • Semiconductor junction lasers
  • Uncooled laser diodes

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