Ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructure

S. K. Ray*, R. Mahapatra, S. Maikap, A. Dhar, D. Bhattacharya, Je Hun Lee

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

4 Scopus citations


Ultrathin HfO2 gate dielectrics have been deposited on strain-compensated Si0.69Ge0.3C0.01 layers by rf magnetron sputtering. X-ray diffraction spectra show the films to be polycrystalline having both monoclinic and tetragonal phases. The formation of an interfacial layer has been observed by high-resolution transmission electron microscopy. Secondary ion mass spectroscopy and Auger electron spectroscopy analyses show the formation of an amorphous Hf-silicate interfacial layer between the deposited oxide and SiGeC films. The average concentration of Ge at the interfacial layer is found to be 2-3 at%. The leakage current density of HfO2 gate dielectrics is found to be several orders of magnitude lower than that reported for thermal SiO2 with the same equivalent thickness.

Original languageEnglish
Pages (from-to)203-208
Number of pages6
JournalMaterials Science in Semiconductor Processing
Issue number4-6 SPEC. ISS.
StatePublished - 2004
Externally publishedYes


  • HfO
  • High-k oxide
  • SiGeC


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