Ultrathin oxynitride films on strained SiGe layers by a three-step NO/O2/NO process

S. K. Samanta, S. Chatterjee, S. Maikap, C. K. Maiti*

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

3 Scopus citations

Abstract

A technique for the formation of gate quality ultrathin oxynitride films at a low temperature (150 °C) by a three-step (NO/O2/NO) process in a microwave plasma is reported. Oxynitride films have been grown on strained-Si0.74Ge0.26 films. The mechanism of nitrogen incorporation has been studied in detail. The electrical properties of the oxynitride films have been characterized using a metal-insulator-semiconductor (MIS) structure. Capacitance-voltage (C-V), conductance-voltage (G-V), constant current and voltage stressing characteristics have been measured. It is shown that a NO/O2/NO three-step process, in general, gives rise to better electrical properties and reliability compared to a single-step O2- and NO-plasma grown oxide films.

Original languageEnglish
Pages (from-to)91-97
Number of pages7
JournalSolid-State Electronics
Volume48
Issue number1
DOIs
StatePublished - 01 2004
Externally publishedYes

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