Abstract
A technique for the formation of gate quality ultrathin oxynitride films at a low temperature (150 °C) by a three-step (NO/O2/NO) process in a microwave plasma is reported. Oxynitride films have been grown on strained-Si0.74Ge0.26 films. The mechanism of nitrogen incorporation has been studied in detail. The electrical properties of the oxynitride films have been characterized using a metal-insulator-semiconductor (MIS) structure. Capacitance-voltage (C-V), conductance-voltage (G-V), constant current and voltage stressing characteristics have been measured. It is shown that a NO/O2/NO three-step process, in general, gives rise to better electrical properties and reliability compared to a single-step O2- and NO-plasma grown oxide films.
Original language | English |
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Pages (from-to) | 91-97 |
Number of pages | 7 |
Journal | Solid-State Electronics |
Volume | 48 |
Issue number | 1 |
DOIs | |
State | Published - 01 2004 |
Externally published | Yes |