Ultrathin oxynitride films on strained SiGe layers by a three-step NO/O2/NO process

S. K. Samanta; S. Chatterjee; S. Maikap; C. K. Maiti

doi:10.1016/S0038-1101(03)00271-5

Ultrathin oxynitride films on strained SiGe layers by a three-step NO/O₂/NO process

S. K. Samanta
, S. Chatterjee
, S. Maikap
, C. K. Maiti^*

^*Corresponding author for this work

Indian Institute of Technology Kharagpur

Research output: Contribution to journal › Journal Article › peer-review

3 Scopus citations

Abstract

A technique for the formation of gate quality ultrathin oxynitride films at a low temperature (150 °C) by a three-step (NO/O₂/NO) process in a microwave plasma is reported. Oxynitride films have been grown on strained-Si_0.74Ge_0.26 films. The mechanism of nitrogen incorporation has been studied in detail. The electrical properties of the oxynitride films have been characterized using a metal-insulator-semiconductor (MIS) structure. Capacitance-voltage (C-V), conductance-voltage (G-V), constant current and voltage stressing characteristics have been measured. It is shown that a NO/O₂/NO three-step process, in general, gives rise to better electrical properties and reliability compared to a single-step O₂- and NO-plasma grown oxide films.

Original language	English
Pages (from-to)	91-97
Number of pages	7
Journal	Solid-State Electronics
Volume	48
Issue number	1
DOIs	https://doi.org/10.1016/S0038-1101(03)00271-5
State	Published - 01 2004
Externally published	Yes

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title = "Ultrathin oxynitride films on strained SiGe layers by a three-step NO/O2/NO process",

abstract = "A technique for the formation of gate quality ultrathin oxynitride films at a low temperature (150 °C) by a three-step (NO/O2/NO) process in a microwave plasma is reported. Oxynitride films have been grown on strained-Si0.74Ge0.26 films. The mechanism of nitrogen incorporation has been studied in detail. The electrical properties of the oxynitride films have been characterized using a metal-insulator-semiconductor (MIS) structure. Capacitance-voltage (C-V), conductance-voltage (G-V), constant current and voltage stressing characteristics have been measured. It is shown that a NO/O2/NO three-step process, in general, gives rise to better electrical properties and reliability compared to a single-step O2- and NO-plasma grown oxide films.",

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T1 - Ultrathin oxynitride films on strained SiGe layers by a three-step NO/O2/NO process

AU - Samanta, S. K.

AU - Chatterjee, S.

AU - Maikap, S.

AU - Maiti, C. K.

PY - 2004/1

Y1 - 2004/1

N2 - A technique for the formation of gate quality ultrathin oxynitride films at a low temperature (150 °C) by a three-step (NO/O2/NO) process in a microwave plasma is reported. Oxynitride films have been grown on strained-Si0.74Ge0.26 films. The mechanism of nitrogen incorporation has been studied in detail. The electrical properties of the oxynitride films have been characterized using a metal-insulator-semiconductor (MIS) structure. Capacitance-voltage (C-V), conductance-voltage (G-V), constant current and voltage stressing characteristics have been measured. It is shown that a NO/O2/NO three-step process, in general, gives rise to better electrical properties and reliability compared to a single-step O2- and NO-plasma grown oxide films.

AB - A technique for the formation of gate quality ultrathin oxynitride films at a low temperature (150 °C) by a three-step (NO/O2/NO) process in a microwave plasma is reported. Oxynitride films have been grown on strained-Si0.74Ge0.26 films. The mechanism of nitrogen incorporation has been studied in detail. The electrical properties of the oxynitride films have been characterized using a metal-insulator-semiconductor (MIS) structure. Capacitance-voltage (C-V), conductance-voltage (G-V), constant current and voltage stressing characteristics have been measured. It is shown that a NO/O2/NO three-step process, in general, gives rise to better electrical properties and reliability compared to a single-step O2- and NO-plasma grown oxide films.

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U2 - 10.1016/S0038-1101(03)00271-5

DO - 10.1016/S0038-1101(03)00271-5

M3 - 文章

AN - SCOPUS:0142154127

SN - 0038-1101

VL - 48

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EP - 97

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

Ultrathin oxynitride films on strained SiGe layers by a three-step NO/O₂/NO process

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