Unipolar resistive switching behavior in Dy 2O 3 films for nonvolatile memory applications

Jim Long Her; Tung Ming Pan; Chih Hung Lu

doi:10.1016/j.tsf.2012.04.045

Unipolar resistive switching behavior in Dy ₂O ₃ films for nonvolatile memory applications

Jim Long Her, Tung Ming Pan^*, Chih Hung Lu

^*Corresponding author for this work

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

13 Scopus citations

Abstract

In this article, we report the forming-free resistive switching behavior of a Ru/Dy ₂O ₃/TaN memory device incorporating a Dy ₂O ₃ thin film fabricated entirely through processing at room temperature. We used X-ray diffraction, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy to investigate the structural and chemical features of the Dy ₂O ₃ film. The dominant conduction mechanisms in the low- and high-resistance states were ohmic behavior and Poole-Frenkel emission, respectively. The Ru/Dy ₂O ₃/TaN memory device exhibited a high resistance ratio and provided nondestructive readout and reliable data retention. This memory device has a great potential for application in nonvolatile resistive switching memory.

Original language	English
Pages (from-to)	5706-5709
Number of pages	4
Journal	Thin Solid Films
Volume	520
Issue number	17
DOIs	https://doi.org/10.1016/j.tsf.2012.04.045
State	Published - 30 06 2012

Keywords

Dysprosium oxide
Forming-free
Ohmic behavior
Poole-Frenkel emission
Resistive switching
Ru/Dy O /TaN
Sputtering

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10.1016/j.tsf.2012.04.045

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title = "Unipolar resistive switching behavior in Dy 2O 3 films for nonvolatile memory applications",

abstract = "In this article, we report the forming-free resistive switching behavior of a Ru/Dy 2O 3/TaN memory device incorporating a Dy 2O 3 thin film fabricated entirely through processing at room temperature. We used X-ray diffraction, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy to investigate the structural and chemical features of the Dy 2O 3 film. The dominant conduction mechanisms in the low- and high-resistance states were ohmic behavior and Poole-Frenkel emission, respectively. The Ru/Dy 2O 3/TaN memory device exhibited a high resistance ratio and provided nondestructive readout and reliable data retention. This memory device has a great potential for application in nonvolatile resistive switching memory.",

keywords = "Dysprosium oxide, Forming-free, Ohmic behavior, Poole-Frenkel emission, Resistive switching, Ru/Dy O /TaN, Sputtering",

author = "Her, {Jim Long} and Pan, {Tung Ming} and Lu, {Chih Hung}",

year = "2012",

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doi = "10.1016/j.tsf.2012.04.045",

language = "英语",

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pages = "5706--5709",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Unipolar resistive switching behavior in Dy 2O 3 films for nonvolatile memory applications

AU - Her, Jim Long

AU - Pan, Tung Ming

AU - Lu, Chih Hung

PY - 2012/6/30

Y1 - 2012/6/30

N2 - In this article, we report the forming-free resistive switching behavior of a Ru/Dy 2O 3/TaN memory device incorporating a Dy 2O 3 thin film fabricated entirely through processing at room temperature. We used X-ray diffraction, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy to investigate the structural and chemical features of the Dy 2O 3 film. The dominant conduction mechanisms in the low- and high-resistance states were ohmic behavior and Poole-Frenkel emission, respectively. The Ru/Dy 2O 3/TaN memory device exhibited a high resistance ratio and provided nondestructive readout and reliable data retention. This memory device has a great potential for application in nonvolatile resistive switching memory.

AB - In this article, we report the forming-free resistive switching behavior of a Ru/Dy 2O 3/TaN memory device incorporating a Dy 2O 3 thin film fabricated entirely through processing at room temperature. We used X-ray diffraction, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy to investigate the structural and chemical features of the Dy 2O 3 film. The dominant conduction mechanisms in the low- and high-resistance states were ohmic behavior and Poole-Frenkel emission, respectively. The Ru/Dy 2O 3/TaN memory device exhibited a high resistance ratio and provided nondestructive readout and reliable data retention. This memory device has a great potential for application in nonvolatile resistive switching memory.

KW - Dysprosium oxide

KW - Forming-free

KW - Ohmic behavior

KW - Poole-Frenkel emission

KW - Resistive switching

KW - Ru/Dy O /TaN

KW - Sputtering

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U2 - 10.1016/j.tsf.2012.04.045

DO - 10.1016/j.tsf.2012.04.045

M3 - 文章

AN - SCOPUS:84861801788

SN - 0040-6090

VL - 520

SP - 5706

EP - 5709

JO - Thin Solid Films

JF - Thin Solid Films

IS - 17

ER -

Unipolar resistive switching behavior in Dy ₂O ₃ films for nonvolatile memory applications

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Keywords

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