Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit

K. Y. Hsiang; F. S. Chang; Z. F. Lou; A. Aich; A. Senapati; J. Y. Lee; Z. X. Li; J. H. Chen; C. H. Liu; C. W. Liu; S. Maikap; P. Su; T. H. Hou; M. H. Lee

doi:10.1109/TED.2024.3364116

Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit

K. Y. Hsiang
, F. S. Chang
, Z. F. Lou
, A. Aich
, A. Senapati
, J. Y. Lee
, Z. X. Li
, J. H. Chen
, C. H. Liu
, C. W. Liu
, S. Maikap
, P. Su
, T. H. Hou
, M. H. Lee^*

^*Corresponding author for this work

Department of Electronic Engineering

National Yang Ming Chiao Tung University
National Taiwan University
Chang Gung University
National Taiwan Normal University

Research output: Contribution to journal › Journal Article › peer-review

4 Scopus citations

Abstract

Asymmetric field cycling recovery (AFCR) with alternating opposite low E -field cycling is proposed to restore a fatigued ferroelectric (FE) capacitor and is experimentally demonstrated for up to 1012 switching cycles, thereby extending the endurance of FeRAM. Positive and negative asymmetric minor loops (AmLs) with AFCR exhibit nondegradation and complete restoration of Δ 2P r toward unlimited endurance operation. Furthermore, an FE random access memory (FeRAM) array circuit with an inverting amplifier is designed to simultaneously execute Write/Read and Recovery procedures via the AFCR scheme.

Original language	English
Pages (from-to)	2708-2713
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	71
Issue number	4
DOIs	https://doi.org/10.1109/TED.2024.3364116
State	Published - 01 04 2024

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

Endurance
ferroelectric (FE)
recovery

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10.1109/TED.2024.3364116

Cite this

Hsiang, K. Y., Chang, F. S., Lou, Z. F., Aich, A., Senapati, A., Lee, J. Y., Li, Z. X., Chen, J. H., Liu, C. H., Liu, C. W., Maikap, S., Su, P., Hou, T. H., & Lee, M. H. (2024). Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit. IEEE Transactions on Electron Devices, 71(4), 2708-2713. https://doi.org/10.1109/TED.2024.3364116

@article{efdbc19639ad40f39baf05912d3e4f06,

title = "Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit",

abstract = "Asymmetric field cycling recovery (AFCR) with alternating opposite low E -field cycling is proposed to restore a fatigued ferroelectric (FE) capacitor and is experimentally demonstrated for up to 1012 switching cycles, thereby extending the endurance of FeRAM. Positive and negative asymmetric minor loops (AmLs) with AFCR exhibit nondegradation and complete restoration of Δ 2P r toward unlimited endurance operation. Furthermore, an FE random access memory (FeRAM) array circuit with an inverting amplifier is designed to simultaneously execute Write/Read and Recovery procedures via the AFCR scheme.",

keywords = "Endurance, ferroelectric (FE), recovery",

author = "Hsiang, \{K. Y.\} and Chang, \{F. S.\} and Lou, \{Z. F.\} and A. Aich and A. Senapati and Lee, \{J. Y.\} and Li, \{Z. X.\} and Chen, \{J. H.\} and Liu, \{C. H.\} and Liu, \{C. W.\} and S. Maikap and P. Su and Hou, \{T. H.\} and Lee, \{M. H.\}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2024",

month = apr,

day = "1",

doi = "10.1109/TED.2024.3364116",

language = "英语",

volume = "71",

pages = "2708--2713",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Hsiang, KY, Chang, FS, Lou, ZF, Aich, A, Senapati, A, Lee, JY, Li, ZX, Chen, JH, Liu, CH, Liu, CW, Maikap, S, Su, P, Hou, TH & Lee, MH 2024, 'Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit', IEEE Transactions on Electron Devices, vol. 71, no. 4, pp. 2708-2713. https://doi.org/10.1109/TED.2024.3364116

TY - JOUR

T1 - Unleashing Endurance Limits of Emerging Memory

T2 - Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit

AU - Hsiang, K. Y.

AU - Chang, F. S.

AU - Lou, Z. F.

AU - Aich, A.

AU - Senapati, A.

AU - Lee, J. Y.

AU - Li, Z. X.

AU - Chen, J. H.

AU - Liu, C. H.

AU - Liu, C. W.

AU - Maikap, S.

AU - Su, P.

AU - Hou, T. H.

AU - Lee, M. H.

PY - 2024/4/1

Y1 - 2024/4/1

N2 - Asymmetric field cycling recovery (AFCR) with alternating opposite low E -field cycling is proposed to restore a fatigued ferroelectric (FE) capacitor and is experimentally demonstrated for up to 1012 switching cycles, thereby extending the endurance of FeRAM. Positive and negative asymmetric minor loops (AmLs) with AFCR exhibit nondegradation and complete restoration of Δ 2P r toward unlimited endurance operation. Furthermore, an FE random access memory (FeRAM) array circuit with an inverting amplifier is designed to simultaneously execute Write/Read and Recovery procedures via the AFCR scheme.

AB - Asymmetric field cycling recovery (AFCR) with alternating opposite low E -field cycling is proposed to restore a fatigued ferroelectric (FE) capacitor and is experimentally demonstrated for up to 1012 switching cycles, thereby extending the endurance of FeRAM. Positive and negative asymmetric minor loops (AmLs) with AFCR exhibit nondegradation and complete restoration of Δ 2P r toward unlimited endurance operation. Furthermore, an FE random access memory (FeRAM) array circuit with an inverting amplifier is designed to simultaneously execute Write/Read and Recovery procedures via the AFCR scheme.

KW - Endurance

KW - ferroelectric (FE)

KW - recovery

UR - https://www.scopus.com/pages/publications/85187244257

U2 - 10.1109/TED.2024.3364116

DO - 10.1109/TED.2024.3364116

M3 - 文章

AN - SCOPUS:85187244257

SN - 0018-9383

VL - 71

SP - 2708

EP - 2713

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -

Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit

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