Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; A. P. Zhang; F. Ren; S. J. Pearton; J. I. Chyi; T. E. Nee; C. C. Chuo; C. M. Lee

doi:10.1016/S0038-1101(00)00124-6

Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors

A. Y. Polyakov^*, N. B. Smirnov, A. V. Govorkov, A. P. Zhang, F. Ren, S. J. Pearton, J. I. Chyi, T. E. Nee, C. C. Chuo, C. M. Lee

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

3 Scopus citations

Abstract

A marked hysteresis was observed in C-T characteristics of GaN p-i-n diodes measured during heating/cooling cycles. The phenomenon is related to positive charging of deep traps located close to the p-n junction and having the concentration higher than about 10¹⁷ cm^-3. Such recharging, via some not completely clear mechanisms, also effects the current-voltage characteristics increasing the reverse and the forward currents at low forward biases.

Original language	English
Pages (from-to)	1549-1555
Number of pages	7
Journal	Solid-State Electronics
Volume	44
Issue number	9
DOIs	https://doi.org/10.1016/S0038-1101(00)00124-6
State	Published - 01 09 2000
Externally published	Yes

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Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Zhang, A. P., Ren, F., Pearton, S. J., Chyi, J. I., Nee, T. E., Chuo, C. C., & Lee, C. M. (2000). Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors. Solid-State Electronics, 44(9), 1549-1555. https://doi.org/10.1016/S0038-1101(00)00124-6

@article{9ea7fb30d4634cdfb71842cbba2ba682,

title = "Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors",

abstract = "A marked hysteresis was observed in C-T characteristics of GaN p-i-n diodes measured during heating/cooling cycles. The phenomenon is related to positive charging of deep traps located close to the p-n junction and having the concentration higher than about 1017 cm-3. Such recharging, via some not completely clear mechanisms, also effects the current-voltage characteristics increasing the reverse and the forward currents at low forward biases.",

author = "Polyakov, \{A. Y.\} and Smirnov, \{N. B.\} and Govorkov, \{A. V.\} and Zhang, \{A. P.\} and F. Ren and Pearton, \{S. J.\} and Chyi, \{J. I.\} and Nee, \{T. E.\} and Chuo, \{C. C.\} and Lee, \{C. M.\}",

year = "2000",

month = sep,

day = "1",

doi = "10.1016/S0038-1101(00)00124-6",

language = "英语",

volume = "44",

pages = "1549--1555",

journal = "Solid-State Electronics",

issn = "0038-1101",

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number = "9",

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TY - JOUR

T1 - Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Zhang, A. P.

AU - Ren, F.

AU - Pearton, S. J.

AU - Chyi, J. I.

AU - Nee, T. E.

AU - Chuo, C. C.

AU - Lee, C. M.

PY - 2000/9/1

Y1 - 2000/9/1

N2 - A marked hysteresis was observed in C-T characteristics of GaN p-i-n diodes measured during heating/cooling cycles. The phenomenon is related to positive charging of deep traps located close to the p-n junction and having the concentration higher than about 1017 cm-3. Such recharging, via some not completely clear mechanisms, also effects the current-voltage characteristics increasing the reverse and the forward currents at low forward biases.

AB - A marked hysteresis was observed in C-T characteristics of GaN p-i-n diodes measured during heating/cooling cycles. The phenomenon is related to positive charging of deep traps located close to the p-n junction and having the concentration higher than about 1017 cm-3. Such recharging, via some not completely clear mechanisms, also effects the current-voltage characteristics increasing the reverse and the forward currents at low forward biases.

UR - https://www.scopus.com/pages/publications/0034272905

U2 - 10.1016/S0038-1101(00)00124-6

DO - 10.1016/S0038-1101(00)00124-6

M3 - 文章

AN - SCOPUS:0034272905

SN - 0038-1101

VL - 44

SP - 1549

EP - 1555

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9

ER -

Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors

Abstract

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