Using BCl3-based plasma to modify wet-etching pattern sapphire substrate for improving the growth of GaN-Based LEDs

Bo Wen Lin; Chen Yi Niu; Cheng Yu Hsieh; Bau Ming Wang; Wen Ching Hsu; Ray Ming Lin; Yew Chung Sermon Wu

doi:10.1109/LPT.2013.2238226

Using BCl₃-based plasma to modify wet-etching pattern sapphire substrate for improving the growth of GaN-Based LEDs

Bo Wen Lin^*
, Chen Yi Niu
, Cheng Yu Hsieh
, Bau Ming Wang
, Wen Ching Hsu
, Ray Ming Lin
, Yew Chung Sermon Wu

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

Wet-etching pattern sapphire substrates (PSS) have been used to grow GaN-based light-emitting diodes (LEDs). However, after wet etching, several sidewall facets are exposed on the patterns of PSS. These sidewall facets would grow zincblende GaN and form irregular voids. In this letter, BCl ₃-based plasma is used to solve this problem and improve the performance of GaN-based LEDs.

Original language	English
Article number	6407764
Pages (from-to)	371-373
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	25
Issue number	4
DOIs	https://doi.org/10.1109/LPT.2013.2238226
State	Published - 2013

Keywords

BCl}
light-emitting diode (LED)
pattern
sapphire

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10.1109/LPT.2013.2238226

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title = "Using BCl3-based plasma to modify wet-etching pattern sapphire substrate for improving the growth of GaN-Based LEDs",

abstract = "Wet-etching pattern sapphire substrates (PSS) have been used to grow GaN-based light-emitting diodes (LEDs). However, after wet etching, several sidewall facets are exposed on the patterns of PSS. These sidewall facets would grow zincblende GaN and form irregular voids. In this letter, BCl 3-based plasma is used to solve this problem and improve the performance of GaN-based LEDs.",

keywords = "BCl\}, light-emitting diode (LED), pattern, sapphire",

author = "Lin, \{Bo Wen\} and Niu, \{Chen Yi\} and Hsieh, \{Cheng Yu\} and Wang, \{Bau Ming\} and Hsu, \{Wen Ching\} and Lin, \{Ray Ming\} and Wu, \{Yew Chung Sermon\}",

year = "2013",

doi = "10.1109/LPT.2013.2238226",

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AU - Lin, Bo Wen

AU - Niu, Chen Yi

AU - Hsieh, Cheng Yu

AU - Wang, Bau Ming

AU - Hsu, Wen Ching

AU - Lin, Ray Ming

AU - Wu, Yew Chung Sermon

PY - 2013

Y1 - 2013

N2 - Wet-etching pattern sapphire substrates (PSS) have been used to grow GaN-based light-emitting diodes (LEDs). However, after wet etching, several sidewall facets are exposed on the patterns of PSS. These sidewall facets would grow zincblende GaN and form irregular voids. In this letter, BCl 3-based plasma is used to solve this problem and improve the performance of GaN-based LEDs.

AB - Wet-etching pattern sapphire substrates (PSS) have been used to grow GaN-based light-emitting diodes (LEDs). However, after wet etching, several sidewall facets are exposed on the patterns of PSS. These sidewall facets would grow zincblende GaN and form irregular voids. In this letter, BCl 3-based plasma is used to solve this problem and improve the performance of GaN-based LEDs.

KW - BCl}

KW - light-emitting diode (LED)

KW - pattern

KW - sapphire

UR - https://www.scopus.com/pages/publications/84873298706

U2 - 10.1109/LPT.2013.2238226

DO - 10.1109/LPT.2013.2238226

M3 - 文章

AN - SCOPUS:84873298706

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SP - 371

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 4

M1 - 6407764

ER -

Using BCl₃-based plasma to modify wet-etching pattern sapphire substrate for improving the growth of GaN-Based LEDs

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Keywords

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