Abstract
A low local oscillator (LO)-power, V-Band MMIC down-conversion, double-balanced Gilbert mixer with integrated RF and LO baluns is designed and fabricated using standard 0.15-μm pHEMT MMIC technology and characterized using probe measurements. There is a high conversion gain at a low-LO power level. This enables the proposed "current bleeding resistor divider voltage" technique, also provided in the Gilbert-cell mixer, to boost the conversion gain at a low-LO power level. The greatest conversion gain is from 5.17 to 1.41 dB at an RF frequency 53-60 GHz, and a Pub of -9.5 dBm at an LO input power of -7 dBm. Both RF-LO and LO-RF isolations are better than 25 dB. This is believed to be the lowest-LO power and highest conversion gain so far achieved for V-band mixers.
Original language | English |
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Pages (from-to) | 60-64 |
Number of pages | 5 |
Journal | Microwave and Optical Technology Letters |
Volume | 56 |
Issue number | 1 |
DOIs | |
State | Published - 01 2014 |
Keywords
- HEMT
- MMIC
- PDA
- V-band
- balun
- high electron mobility transistor
- low local oscillator
- microwave monolithic integrated circuit
- mixer
- personal device aid