V-band GaAs low LO power driven double-balanced Gilbert mixer based on dual-meandering baluns design

P. Y. Ke, F. H. Huang, H. L. Kao, Hsien Chin Chiu*

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

Abstract

A low local oscillator (LO)-power, V-Band MMIC down-conversion, double-balanced Gilbert mixer with integrated RF and LO baluns is designed and fabricated using standard 0.15-μm pHEMT MMIC technology and characterized using probe measurements. There is a high conversion gain at a low-LO power level. This enables the proposed "current bleeding resistor divider voltage" technique, also provided in the Gilbert-cell mixer, to boost the conversion gain at a low-LO power level. The greatest conversion gain is from 5.17 to 1.41 dB at an RF frequency 53-60 GHz, and a Pub of -9.5 dBm at an LO input power of -7 dBm. Both RF-LO and LO-RF isolations are better than 25 dB. This is believed to be the lowest-LO power and highest conversion gain so far achieved for V-band mixers.

Original languageEnglish
Pages (from-to)60-64
Number of pages5
JournalMicrowave and Optical Technology Letters
Volume56
Issue number1
DOIs
StatePublished - 01 2014

Keywords

  • HEMT
  • MMIC
  • PDA
  • V-band
  • balun
  • high electron mobility transistor
  • low local oscillator
  • microwave monolithic integrated circuit
  • mixer
  • personal device aid

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