V-band GaAs pHEMT cross-coupled sub-harmonic oscillator

Fan Hsiu Huang; Cheng Kuo Lin; Yi Jen Chan

doi:10.1109/LMWC.2006.879479

V-band GaAs pHEMT cross-coupled sub-harmonic oscillator

Fan Hsiu Huang^*, Cheng Kuo Lin, Yi Jen Chan

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

8 Scopus citations

Abstract

A V-band cross-coupled sub-harmonic injection-locked oscillator has been designed and fabricated using 0.15-μm GaAs pHMET technology. Based on the known harmonic injecting circuit topology, this oscillator was designed by a differential output approach, a low-Q micros trip-line resonator, and a current mirror, which has a free-running oscillation frequency around 60 GHz with a tuning range of 2.5 GHz (from 57.8 GHz to 60.3 GHz). The maximum single-end output power is 3.8 dBm with a dc dissipation of 225 mW under a -3 V supply voltage. Within the input matching network for second (30 GHz) and fourth (15 GHz) sub-harmonic signals injection, it demonstrates the maximum locking ranges close to 120 MHz and 30 MHz, respectively.

Original language	English
Article number	1661648
Pages (from-to)	473-475
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	16
Issue number	8
DOIs	https://doi.org/10.1109/LMWC.2006.879479
State	Published - 08 2006
Externally published	Yes

Keywords

Cross-coupled oscillator
GaAs pseudomorphic high electron mobility transistor (pHEMT)
Sub-harmonic injection-locked oscillator

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10.1109/LMWC.2006.879479

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title = "V-band GaAs pHEMT cross-coupled sub-harmonic oscillator",

abstract = "A V-band cross-coupled sub-harmonic injection-locked oscillator has been designed and fabricated using 0.15-μm GaAs pHMET technology. Based on the known harmonic injecting circuit topology, this oscillator was designed by a differential output approach, a low-Q micros trip-line resonator, and a current mirror, which has a free-running oscillation frequency around 60 GHz with a tuning range of 2.5 GHz (from 57.8 GHz to 60.3 GHz). The maximum single-end output power is 3.8 dBm with a dc dissipation of 225 mW under a -3 V supply voltage. Within the input matching network for second (30 GHz) and fourth (15 GHz) sub-harmonic signals injection, it demonstrates the maximum locking ranges close to 120 MHz and 30 MHz, respectively.",

keywords = "Cross-coupled oscillator, GaAs pseudomorphic high electron mobility transistor (pHEMT), Sub-harmonic injection-locked oscillator",

author = "Huang, \{Fan Hsiu\} and Lin, \{Cheng Kuo\} and Chan, \{Yi Jen\}",

year = "2006",

month = aug,

doi = "10.1109/LMWC.2006.879479",

language = "英语",

volume = "16",

pages = "473--475",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - V-band GaAs pHEMT cross-coupled sub-harmonic oscillator

AU - Huang, Fan Hsiu

AU - Lin, Cheng Kuo

AU - Chan, Yi Jen

PY - 2006/8

Y1 - 2006/8

N2 - A V-band cross-coupled sub-harmonic injection-locked oscillator has been designed and fabricated using 0.15-μm GaAs pHMET technology. Based on the known harmonic injecting circuit topology, this oscillator was designed by a differential output approach, a low-Q micros trip-line resonator, and a current mirror, which has a free-running oscillation frequency around 60 GHz with a tuning range of 2.5 GHz (from 57.8 GHz to 60.3 GHz). The maximum single-end output power is 3.8 dBm with a dc dissipation of 225 mW under a -3 V supply voltage. Within the input matching network for second (30 GHz) and fourth (15 GHz) sub-harmonic signals injection, it demonstrates the maximum locking ranges close to 120 MHz and 30 MHz, respectively.

AB - A V-band cross-coupled sub-harmonic injection-locked oscillator has been designed and fabricated using 0.15-μm GaAs pHMET technology. Based on the known harmonic injecting circuit topology, this oscillator was designed by a differential output approach, a low-Q micros trip-line resonator, and a current mirror, which has a free-running oscillation frequency around 60 GHz with a tuning range of 2.5 GHz (from 57.8 GHz to 60.3 GHz). The maximum single-end output power is 3.8 dBm with a dc dissipation of 225 mW under a -3 V supply voltage. Within the input matching network for second (30 GHz) and fourth (15 GHz) sub-harmonic signals injection, it demonstrates the maximum locking ranges close to 120 MHz and 30 MHz, respectively.

KW - Cross-coupled oscillator

KW - GaAs pseudomorphic high electron mobility transistor (pHEMT)

KW - Sub-harmonic injection-locked oscillator

UR - https://www.scopus.com/pages/publications/33746899388

U2 - 10.1109/LMWC.2006.879479

DO - 10.1109/LMWC.2006.879479

M3 - 文章

AN - SCOPUS:33746899388

SN - 1531-1309

VL - 16

SP - 473

EP - 475

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 8

M1 - 1661648

ER -

V-band GaAs pHEMT cross-coupled sub-harmonic oscillator

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