Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes with a Slanted Sidewall

Xinke Liu; Bo Li; Junye Wu; Jian Li; Wen Yue; Renqiang Zhu; Qi Wang; Xiaohua Li; Jianwei Ben; Wei He; Hsien Chin Chiu; Ke Xu; Ze Zhong

doi:10.1109/JEDS.2023.3340512

Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes with a Slanted Sidewall

Xinke Liu, Bo Li, Junye Wu, Jian Li, Wen Yue, Renqiang Zhu, Qi Wang, Xiaohua Li, Jianwei Ben, Wei He, Hsien Chin Chiu, Ke Xu, Ze Zhong^*

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

Abstract

In this work, vertical gallium nitride (GaN) trench Junction Barrier Schottky (JBS) diodes fabricated with a novelty slanted p-GaN sidewall on a 2-inch free-standing GaN (FS-GaN) substrate were demonstrated. The slanted sidewall on edge of devices was conducted to suppress the peak of electric field distributions at high voltage. By realizing an off-state breakdown voltage VBR of 2 kV and an on-state resistance Ron of 1.34 m•cm2, the devices fabricated in this work achieved the highest power device figure-of-merit VBR 2 /Ron of 3.0 GW/cm2 in the reported vertical GaN JBS diodes which showed great potential in high voltage applications.

Original language	English
Pages (from-to)	34-38
Number of pages	5
Journal	IEEE Journal of the Electron Devices Society
Volume	12
DOIs	https://doi.org/10.1109/JEDS.2023.3340512
State	Published - 2024

Bibliographical note

Publisher Copyright:
© 2013 IEEE.

Keywords

diodes
high breakdown voltage
slanted sidewall

Access to Document

10.1109/JEDS.2023.3340512

Cite this

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title = "Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes with a Slanted Sidewall",

abstract = "In this work, vertical gallium nitride (GaN) trench Junction Barrier Schottky (JBS) diodes fabricated with a novelty slanted p-GaN sidewall on a 2-inch free-standing GaN (FS-GaN) substrate were demonstrated. The slanted sidewall on edge of devices was conducted to suppress the peak of electric field distributions at high voltage. By realizing an off-state breakdown voltage VBR of 2 kV and an on-state resistance Ron of 1.34 m•cm2, the devices fabricated in this work achieved the highest power device figure-of-merit VBR 2 /Ron of 3.0 GW/cm2 in the reported vertical GaN JBS diodes which showed great potential in high voltage applications.",

keywords = "diodes, high breakdown voltage, slanted sidewall",

author = "Xinke Liu and Bo Li and Junye Wu and Jian Li and Wen Yue and Renqiang Zhu and Qi Wang and Xiaohua Li and Jianwei Ben and Wei He and Chiu, {Hsien Chin} and Ke Xu and Ze Zhong",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2024",

doi = "10.1109/JEDS.2023.3340512",

language = "英语",

volume = "12",

pages = "34--38",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

}

TY - JOUR

T1 - Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes with a Slanted Sidewall

AU - Liu, Xinke

AU - Li, Bo

AU - Wu, Junye

AU - Li, Jian

AU - Yue, Wen

AU - Zhu, Renqiang

AU - Wang, Qi

AU - Li, Xiaohua

AU - Ben, Jianwei

AU - He, Wei

AU - Chiu, Hsien Chin

AU - Xu, Ke

AU - Zhong, Ze

PY - 2024

Y1 - 2024

N2 - In this work, vertical gallium nitride (GaN) trench Junction Barrier Schottky (JBS) diodes fabricated with a novelty slanted p-GaN sidewall on a 2-inch free-standing GaN (FS-GaN) substrate were demonstrated. The slanted sidewall on edge of devices was conducted to suppress the peak of electric field distributions at high voltage. By realizing an off-state breakdown voltage VBR of 2 kV and an on-state resistance Ron of 1.34 m•cm2, the devices fabricated in this work achieved the highest power device figure-of-merit VBR 2 /Ron of 3.0 GW/cm2 in the reported vertical GaN JBS diodes which showed great potential in high voltage applications.

AB - In this work, vertical gallium nitride (GaN) trench Junction Barrier Schottky (JBS) diodes fabricated with a novelty slanted p-GaN sidewall on a 2-inch free-standing GaN (FS-GaN) substrate were demonstrated. The slanted sidewall on edge of devices was conducted to suppress the peak of electric field distributions at high voltage. By realizing an off-state breakdown voltage VBR of 2 kV and an on-state resistance Ron of 1.34 m•cm2, the devices fabricated in this work achieved the highest power device figure-of-merit VBR 2 /Ron of 3.0 GW/cm2 in the reported vertical GaN JBS diodes which showed great potential in high voltage applications.

KW - diodes

KW - high breakdown voltage

KW - slanted sidewall

UR - http://www.scopus.com/inward/record.url?scp=85179783244&partnerID=8YFLogxK

U2 - 10.1109/JEDS.2023.3340512

DO - 10.1109/JEDS.2023.3340512

M3 - 文章

AN - SCOPUS:85179783244

SN - 2168-6734

VL - 12

SP - 34

EP - 38

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

ER -

Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes with a Slanted Sidewall

Abstract

Bibliographical note

Keywords

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