Vertical GaN Schottky barrier diodes with micrometer pillar Schottky contacts

Renqiang Zhu; Bo Li; Shuai Li; Zhengweng Ma; Huakai Yang; Shijie He; Shuangwu Huang; Xinbo Xiong; Hsien Chin Chiu; Xiaohua Li; Bo Zhang; Xinke Liu

doi:10.1088/1361-6463/ada391

Vertical GaN Schottky barrier diodes with micrometer pillar Schottky contacts

Renqiang Zhu, Bo Li, Shuai Li, Zhengweng Ma, Huakai Yang, Shijie He, Shuangwu Huang, Xinbo Xiong, Hsien Chin Chiu, Xiaohua Li, Bo Zhang, Xinke Liu^*

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

Abstract

We present a novel design of gallium nitride (GaN) Schottky barrier diodes (SBDs) with a vertical micropillar structure. The micron-scale electrode design can effectively enhance the on-state current density and reduce the specific on-resistance (R_on,Sp). In addition, it allows for a reduction in the turn-on voltage (V_on) by minimizing the spacing between the electrodes. This phenomenon can be explained by the intensified electric field coupling between the electrodes, as confirmed from the technology computer aided design simulations. By controlling the distance between the micron pillars, the V_on of the SBD varies from approximately 0.35 V to 0.46 V. These results showcase the potential of our SBD design with micropillar contacts in efficient high-power applications.

Original language	English
Article number	105103
Journal	Journal of Physics D: Applied Physics
Volume	58
Issue number	10
DOIs	https://doi.org/10.1088/1361-6463/ada391
State	Published - 10 03 2025

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Publisher Copyright:
© 2025 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.

Keywords

GaN-on-GaN
micrometer pillar
ultra-low turn-on voltage
ultralow R
vertical devices

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10.1088/1361-6463/ada391

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@article{b15030c0868940ba8661b74b7b559ca4,

title = "Vertical GaN Schottky barrier diodes with micrometer pillar Schottky contacts",

abstract = "We present a novel design of gallium nitride (GaN) Schottky barrier diodes (SBDs) with a vertical micropillar structure. The micron-scale electrode design can effectively enhance the on-state current density and reduce the specific on-resistance (Ron,Sp). In addition, it allows for a reduction in the turn-on voltage (Von) by minimizing the spacing between the electrodes. This phenomenon can be explained by the intensified electric field coupling between the electrodes, as confirmed from the technology computer aided design simulations. By controlling the distance between the micron pillars, the Von of the SBD varies from approximately 0.35 V to 0.46 V. These results showcase the potential of our SBD design with micropillar contacts in efficient high-power applications.",

keywords = "GaN-on-GaN, micrometer pillar, ultra-low turn-on voltage, ultralow R, vertical devices",

author = "Renqiang Zhu and Bo Li and Shuai Li and Zhengweng Ma and Huakai Yang and Shijie He and Shuangwu Huang and Xinbo Xiong and Chiu, {Hsien Chin} and Xiaohua Li and Bo Zhang and Xinke Liu",

note = "Publisher Copyright: {\textcopyright} 2025 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.",

year = "2025",

month = mar,

day = "10",

doi = "10.1088/1361-6463/ada391",

language = "英语",

volume = "58",

journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

publisher = "Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Vertical GaN Schottky barrier diodes with micrometer pillar Schottky contacts

AU - Zhu, Renqiang

AU - Li, Bo

AU - Li, Shuai

AU - Ma, Zhengweng

AU - Yang, Huakai

AU - He, Shijie

AU - Huang, Shuangwu

AU - Xiong, Xinbo

AU - Chiu, Hsien Chin

AU - Li, Xiaohua

AU - Zhang, Bo

AU - Liu, Xinke

PY - 2025/3/10

Y1 - 2025/3/10

N2 - We present a novel design of gallium nitride (GaN) Schottky barrier diodes (SBDs) with a vertical micropillar structure. The micron-scale electrode design can effectively enhance the on-state current density and reduce the specific on-resistance (Ron,Sp). In addition, it allows for a reduction in the turn-on voltage (Von) by minimizing the spacing between the electrodes. This phenomenon can be explained by the intensified electric field coupling between the electrodes, as confirmed from the technology computer aided design simulations. By controlling the distance between the micron pillars, the Von of the SBD varies from approximately 0.35 V to 0.46 V. These results showcase the potential of our SBD design with micropillar contacts in efficient high-power applications.

AB - We present a novel design of gallium nitride (GaN) Schottky barrier diodes (SBDs) with a vertical micropillar structure. The micron-scale electrode design can effectively enhance the on-state current density and reduce the specific on-resistance (Ron,Sp). In addition, it allows for a reduction in the turn-on voltage (Von) by minimizing the spacing between the electrodes. This phenomenon can be explained by the intensified electric field coupling between the electrodes, as confirmed from the technology computer aided design simulations. By controlling the distance between the micron pillars, the Von of the SBD varies from approximately 0.35 V to 0.46 V. These results showcase the potential of our SBD design with micropillar contacts in efficient high-power applications.

KW - GaN-on-GaN

KW - micrometer pillar

KW - ultra-low turn-on voltage

KW - ultralow R

KW - vertical devices

UR - http://www.scopus.com/inward/record.url?scp=85214289772&partnerID=8YFLogxK

U2 - 10.1088/1361-6463/ada391

DO - 10.1088/1361-6463/ada391

M3 - 文章

AN - SCOPUS:85214289772

SN - 0022-3727

VL - 58

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 10

M1 - 105103

ER -

Vertical GaN Schottky barrier diodes with micrometer pillar Schottky contacts

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