Vertical GaN Schottky barrier diodes with ohmic contact on N-polar by the atomic layer deposition of aluminum oxide interfacial layer

Yongkai Yang; Zhengweng Ma; Zhongwei Jiang; Bo Li; Linfei Gao; Shuai Li; Qiubao Lin; Hezhou Liu; Wangying Xu; Gaopan Chen; Chunfu Zhang; Zhihong Liu; Hsien Chin Chiu; Hao Chung Kuo; Jin Ping Ao; Xinke Liu

doi:10.1016/j.apsusc.2024.161268

Vertical GaN Schottky barrier diodes with ohmic contact on N-polar by the atomic layer deposition of aluminum oxide interfacial layer

Yongkai Yang
, Zhengweng Ma
, Zhongwei Jiang
, Bo Li
, Linfei Gao
, Shuai Li
, Qiubao Lin
, Hezhou Liu
, Wangying Xu
, Gaopan Chen
, Chunfu Zhang
, Zhihong Liu
, Hsien Chin Chiu
, Hao Chung Kuo
, Jin Ping Ao
, Xinke Liu^*

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

In this paper, high-performance vertical GaN on GaN Schottky Barrier Diodes (SBDs) on 2-inch free-standing (FS)-GaN is presented with the specific on-state resistance (R_on) of 1.34 mΩ·cm², breakdown voltage (V_br) of 1150 V and figure of merit (FOM) of 0.98 GW/cm². He-implanted edge termination (ET) structure is introduced to alleviate the peak electric field concentration effect at the anode edge of GaN SBDs. Furthermore, A new ohmic contact structure is explored by atomic layer deposition (ALD)-grown AlO_x interfacial layer. Based on the self-cleaning effect of ALD and Ultra-thin AlO_x interfacial layer, the Fermi-level Pinning (FLP) effect is alleviated effectively, the specific contact resistivity (ρ_c) on N-polar GaN was reduced from 1.63 × 10⁻³ to 7.14 × 10⁻⁵ Ω·cm².The temperature variation test demonstrate the devices has potential of temperature sensors under high voltage and high temperature.

Original language	English
Article number	161268
Journal	Applied Surface Science
Volume	679
DOIs	https://doi.org/10.1016/j.apsusc.2024.161268
State	Published - 15 01 2025

Bibliographical note

Publisher Copyright:
© 2024 Elsevier B.V.

Keywords

AlO interfacial layer
GaN-on-GaN
N-polar
Ohmic contact
Vertical SBDs

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10.1016/j.apsusc.2024.161268

Cite this

Yang, Y., Ma, Z., Jiang, Z., Li, B., Gao, L., Li, S., Lin, Q., Liu, H., Xu, W., Chen, G., Zhang, C., Liu, Z., Chiu, H. C., Kuo, H. C., Ao, J. P., & Liu, X. (2025). Vertical GaN Schottky barrier diodes with ohmic contact on N-polar by the atomic layer deposition of aluminum oxide interfacial layer. Applied Surface Science, 679, Article 161268. https://doi.org/10.1016/j.apsusc.2024.161268

@article{2885815f56924ce197308a888da40abb,

title = "Vertical GaN Schottky barrier diodes with ohmic contact on N-polar by the atomic layer deposition of aluminum oxide interfacial layer",

abstract = "In this paper, high-performance vertical GaN on GaN Schottky Barrier Diodes (SBDs) on 2-inch free-standing (FS)-GaN is presented with the specific on-state resistance (Ron) of 1.34 mΩ·cm2, breakdown voltage (Vbr) of 1150 V and figure of merit (FOM) of 0.98 GW/cm2. He-implanted edge termination (ET) structure is introduced to alleviate the peak electric field concentration effect at the anode edge of GaN SBDs. Furthermore, A new ohmic contact structure is explored by atomic layer deposition (ALD)-grown AlOx interfacial layer. Based on the self-cleaning effect of ALD and Ultra-thin AlOx interfacial layer, the Fermi-level Pinning (FLP) effect is alleviated effectively, the specific contact resistivity (ρc) on N-polar GaN was reduced from 1.63 × 10−3 to 7.14 × 10−5 Ω·cm2.The temperature variation test demonstrate the devices has potential of temperature sensors under high voltage and high temperature.",

keywords = "AlO interfacial layer, GaN-on-GaN, N-polar, Ohmic contact, Vertical SBDs",

author = "Yongkai Yang and Zhengweng Ma and Zhongwei Jiang and Bo Li and Linfei Gao and Shuai Li and Qiubao Lin and Hezhou Liu and Wangying Xu and Gaopan Chen and Chunfu Zhang and Zhihong Liu and Chiu, \{Hsien Chin\} and Kuo, \{Hao Chung\} and Ao, \{Jin Ping\} and Xinke Liu",

note = "Publisher Copyright: {\textcopyright} 2024 Elsevier B.V.",

year = "2025",

month = jan,

day = "15",

doi = "10.1016/j.apsusc.2024.161268",

language = "英语",

volume = "679",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Vertical GaN Schottky barrier diodes with ohmic contact on N-polar by the atomic layer deposition of aluminum oxide interfacial layer

AU - Yang, Yongkai

AU - Ma, Zhengweng

AU - Jiang, Zhongwei

AU - Li, Bo

AU - Gao, Linfei

AU - Li, Shuai

AU - Lin, Qiubao

AU - Liu, Hezhou

AU - Xu, Wangying

AU - Chen, Gaopan

AU - Zhang, Chunfu

AU - Liu, Zhihong

AU - Chiu, Hsien Chin

AU - Kuo, Hao Chung

AU - Ao, Jin Ping

AU - Liu, Xinke

PY - 2025/1/15

Y1 - 2025/1/15

N2 - In this paper, high-performance vertical GaN on GaN Schottky Barrier Diodes (SBDs) on 2-inch free-standing (FS)-GaN is presented with the specific on-state resistance (Ron) of 1.34 mΩ·cm2, breakdown voltage (Vbr) of 1150 V and figure of merit (FOM) of 0.98 GW/cm2. He-implanted edge termination (ET) structure is introduced to alleviate the peak electric field concentration effect at the anode edge of GaN SBDs. Furthermore, A new ohmic contact structure is explored by atomic layer deposition (ALD)-grown AlOx interfacial layer. Based on the self-cleaning effect of ALD and Ultra-thin AlOx interfacial layer, the Fermi-level Pinning (FLP) effect is alleviated effectively, the specific contact resistivity (ρc) on N-polar GaN was reduced from 1.63 × 10−3 to 7.14 × 10−5 Ω·cm2.The temperature variation test demonstrate the devices has potential of temperature sensors under high voltage and high temperature.

AB - In this paper, high-performance vertical GaN on GaN Schottky Barrier Diodes (SBDs) on 2-inch free-standing (FS)-GaN is presented with the specific on-state resistance (Ron) of 1.34 mΩ·cm2, breakdown voltage (Vbr) of 1150 V and figure of merit (FOM) of 0.98 GW/cm2. He-implanted edge termination (ET) structure is introduced to alleviate the peak electric field concentration effect at the anode edge of GaN SBDs. Furthermore, A new ohmic contact structure is explored by atomic layer deposition (ALD)-grown AlOx interfacial layer. Based on the self-cleaning effect of ALD and Ultra-thin AlOx interfacial layer, the Fermi-level Pinning (FLP) effect is alleviated effectively, the specific contact resistivity (ρc) on N-polar GaN was reduced from 1.63 × 10−3 to 7.14 × 10−5 Ω·cm2.The temperature variation test demonstrate the devices has potential of temperature sensors under high voltage and high temperature.

KW - AlO interfacial layer

KW - GaN-on-GaN

KW - N-polar

KW - Ohmic contact

KW - Vertical SBDs

UR - https://www.scopus.com/pages/publications/85204442547

U2 - 10.1016/j.apsusc.2024.161268

DO - 10.1016/j.apsusc.2024.161268

M3 - 文章

AN - SCOPUS:85204442547

SN - 0169-4332

VL - 679

JO - Applied Surface Science

JF - Applied Surface Science

M1 - 161268

ER -

Vertical GaN Schottky barrier diodes with ohmic contact on N-polar by the atomic layer deposition of aluminum oxide interfacial layer

Abstract

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Keywords

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