Vertical GaN Schottky barrier diodes with ohmic contact on N-polar by the atomic layer deposition of aluminum oxide interfacial layer

Yongkai Yang, Zhengweng Ma, Zhongwei Jiang, Bo Li, Linfei Gao, Shuai Li, Qiubao Lin, Hezhou Liu, Wangying Xu, Gaopan Chen, Chunfu Zhang, Zhihong Liu, Hsien Chin Chiu, Hao Chung Kuo, Jin Ping Ao, Xinke Liu^*